Cornell University

Johns Hopkins University

Cornell Center for Technology, Enterprise & Commerce

Advanced Analog Silicon IP Corporation

Alyssa B Apsel

Rajeev K Dokania

Xiao Y Wang

Alyosha C Molnar

Anand M Pappu

Sasikanth Manipatruni

Michal Lipson

Rajit Manohar

Andreas G Andreou

Tao Sherry Yin

Filipp Akopyan

Thomas P Tapen

Waclaw Godycki

Cheng Po Chen

Carlos I Dorta-Quinones

Systems and methods herein provide for a tunable resonator. In one embodiment, a tunable resonator includes a transmission line comprising at least two inductor segments and a tap between each of the at least two inductor segments. The resonator also includes one less switch than a number of the at least two inductor segments on the transmission line. Each switch is coupled to one of the taps. And, each switch is operable to decouple at least one of the at least two inductor segments in the transmission line by shunting at least a portion of the transmission line to ground to change a resonant frequency of the transmission line.

Tunable resonator

An active electronic device that enables bidirectional communication over a single antenna or path is disclosed. The device may be characterized by a forward path (from an input to an antenna port) offering high gain, and a reverse path (to a receiver port) that can be configured as an finite impulse response ('FIR') filter. An amplifier of the device is disclosed, the amplifier allowing for tuning of output resistance using passive mixers.

Signal processing device, amplifier, and method

A distributed wireless sensor network includes two or more wireless nodes adapted for sensing a condition at any first node, first programming located within each node for transmitting a signal representing the sensed condition from the first node to another node, second programming located within each node for receiving the signal transmitted from any other node and for retransmitting a received signal representing the sensed condition along with additional data indicating the number of retransmissions of the signal between nodes.

Methods and apparatus for event detection, propagation and localization using UWB impulse radios

A thermally stabilized, high speed, micrometer-scale silicon electro-optic modulator is provided. Methods for maintaining desired temperatures in electro-optic modulators are also provided. The methods can be used to maintain high quality modulation in the presence of thermal variations from the surroundings. Direct current injection into the thermally stabilized electro-optic modulator is used to maintain the modulation performance of the modulator. The direct injected current changes the local temperature of the thermally stabilized electro-optic modulator to maintain its operation over a wide temperature range.

Apparatus and methods for wide temperature range operation of micrometer-scale silicon electro-optic modulators

A transceiver node includes a pulse coupled oscillator in an integrated circuit, which can synchronize with other nodes to generate a global clock subsequently used to facilitate synchronous communications between individual nodes. Known potential uses include a low power sensor node radio for an ad-hoc network for military applications and medical applications such as ingestible and implantable radios, self powered radios, and medical monitoring systems such as cardiac and neural monitoring patches.

Pulse coupled oscillator synchronization for wireless communications

The present invention provides a communications system, node and method of operation for forming a wireless network from independently operating nodes that have the ability to self-synchronize with each other, independently determine master and slave modes of operation to cooperate as a network, and independently vary those functions to adjust to changes in the network.

Methods for PCO based UWB impulse radio with localized synchronization detection and retention

Systems and methods for PCO based UWB impulse radio with localized synchronization detection and retention

An integrated circuit, and method for manufacturing the integrated circuit, where the integrated circuit can include a phototransistor comprising a base having a SiGe base layer of a predetermined germanium composition and a thickness of more than 65 nm and less than about 90 nm. The integrated circuit can further include a transimpedance amplifier (TIA) receiving an output from the phototransistor. The phototransistor and the TIA can be built on a silicon substrate.

Monolithic silicon-based photonic receiver

A method of designing a current source involves selecting an equation for a current output through a circuit. Variations in current are checked to make sure they are not a strong function of process and bias. A circuit topology is then created as a function of the equation. Example circuits include an addition based current source and a square root based current source.

Current source circuit and design methodology

A method and apparatus for converting an analog input signal to a digital output signal, provide for simultaneously comparing the input signal to a sequential multiplicity of reference values representing a range of values of the input signal, and asynchronously processing digital results from simultaneous comparison to produce a digital representation of level crossings of the input signal with respect to the multiplicity of reference values.

Asynchronous analog-to-digital converter and method

A low-power differential optical receiver useful for high-speed optical communication between CMOS chips includes a multi-stage differential amplifier circuit including a first differential transimpedance stage ( ) followed by a plurality of differential feed-forward, high-bandwidth gain stages ( ) and a final, differential-to-single-ended converter output stage ( ). The inputs of the transimpedance stage receive input signals from a MSM or PIN diode photo-detector. Transistors having plural, different threshold levels are employed within each differential amplifier stage to reduce the size of the footprint of the circuit and improve the gain and bandwidth while decreasing the parasitic capacitance. The optical receiver is fabricated on a silicon on insulator chip, such as in an ultra-thin silicon on sapphire CMOS process which enables the design of high speed circuits with low power consumption and no substrate cross-talk. The circuit design is well-suited for use in a multi-dimensional array of optical interconnects between CMOS chips or platforms.

Growing community of inventors

Ithaca, NY, United States of America

Alyssa B Apsel