Ucl Business Plc

University College London

Qinetiq Limited

University of Southampton

Alwyn John Seeds

Huiyun Liu

Andrew David Lee

Cyril Renaud

Michael J Robertson

Frederic Yannick Gardes

Siming Chen

Francesca Pozzi

Christopher D Watson

Michael Robertson

A semiconductor device for use in an optoelectronic integrated circuit; the device comprising: a group four substrate, a waveguide, and a group III/V multilayer stack; wherein the group III/V multilayer stack comprises a quantum component for producing light for the waveguide; wherein the waveguide comprises a material with a deposition temperature below 550 degrees Celsius and a refractive index of any value between 1.3 and 3.8.

Optoelectronic semiconductor device

A semiconductor device comprising a silicon substrate on which is grown a &#x3c;100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.

Semiconductor device and fabrication method

A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface.

An example photodetector includes a waveguide structure having an active waveguide comprising an absorber for converting photons conveying an optical signal into charge carriers conveying a corresponding electrical signal; a carrier collection layer for transporting the charge carriers conveying the electrical signal; and a secondary waveguide immediately adjacent to the carrier collection layer, for receiving the photons to be detected, and which is evanescently coupled to the active waveguide.

Photodetector including multiple waveguides

This invention describes a technique and apparatus to use any tuneable laser to generate a specified output frequency without controlling its temperature. This technique only involves a thermal sensor and a controller a determine the current(s) of voltage(s) applied to the grating or tuning section(s) to obtain the required wavelength. The control loop can be implemented using a programmed microprocessor, an amplifier and a low pass filter.

Athermalisation of tuneable lasers

A frequency synthesiser for generating wideband signals for zero Hz up to frequencies in the millimetre wave band provides the ability for arbitrarily fine increments in output frequency. The synthesiser has an optical comb generator that provides a set of reference signals at predetermined intervals. These reference signals are fed to two or more laser devices, at least one of which is a frequency selection and translation device capable of selecting a particular output line from the comb generator and shifting it by some desired frequency. The outputs from the laser devices are then combined and detected using a photodetector. The output from this is the system output. Various methods of producing the frequency selection and translation device are disclosed, as are various methods of producing the optical comb reference signal. Some possible applications of the invention are also disclosed.

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London, United Kingdom

Alwyn John Seeds