International Business Machines Corporation

Alvin Sugerman

Jeffrey P Gambino

Louis L Hsu

Krishna Seshan

Rangaswamy Srinivasan

Bodil E Braren

Karen H Brown

Kathleen A Perry

Michael A Lee

Francis E Turene

A method for providing superior fill of features in semiconductor processing utilizes a laser ablation system. Deposition is obtained by ablating target materials which are driven off perpendicular to the target in the direction of the deposition surface. The method provides complete fill of high aspect ratio features with nominal heating of the substrate. Alloys and graded layers, as well as pure metals, can be deposited in low temperature patterned layers. In addition, the system has been used to achieve superior trench filling for isolation structures.

Deposition method for high aspect ratio features using photoablation

A temperature sensor, comprising: a diode structure including, a) a silicon substrate, b) a first region of a metal silicide in the silicon substrate, c) a second region of a metal-oxide semiconductor material on the first region, d) a third region of a metal over the second region; and, means for using the diode structure as a temperature sensitive device to measure an ambient temperature. The metal-oxide semiconductor material is preferably selected to have a bandgap of not less than about 3.0 eV.

On-chip temperature sensor utilizing a Schottky barrier diode structure

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Hopewell Junction, NY, United States of America

Alvin Sugerman