Siemens Aktiengesellschaft

International Business Machines Corporation

Alvin P Short

Jack Allan Mandelman

Herbert Lei Ho

Reinhard J Stengl

Erwin Hammerl

Radhika Srinivasan

Bernhard Poschenrieder

Method for forming three-dimensional device structures comprising a second device having sub-groundrule features formed over a first device is disclosed. A layer having a single crystalline top surface is formed above the first device to provide the base for forming the active area of the second device. the sub-groundrule feature is formed using mandrel and spacers.

Three-dimensional device layout with sub-groundrule features

In a method for making an electrical connection between a trench storage capacitor and an access transistor in a DRAM cell, the electrical connection is formed through the selectively controlled outdiffusion of either N-type or P-type dopants present in the trench through a single crystalline semiconducting material which is grown by epitaxy (epi) from the trench sidewall. This epitaxially grown single crystalline layer acts as a barrier to excessive dopant outdiffusion which can occur in the processing of conventional DRAMs.

Buried strap formation in a DRAM trench capacitor

A method for making an electrical connection between a trench storage capacitor and an access transistor in a DRAM cell. The electrical connection is formed through the selectively controlled outdiffusion of either N-type or P-type dopants present in the trench through a single crystalline semiconducting material which is grown by epitaxy (epi) from the trench sidewall. This epitaxially grown single crystalline layer acts as a barrier to excessive dopant outdiffusion which can occur in the processing of conventional DRAMs.

Buried-strap formation in a dram trench capacitor

Method for forming three-dimensional device structures comprising a second device formed over a first device is disclosed. A layer having a single crystalline top surface is formed above the first device to provide the base for forming the active area of the second device.

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Poughkeepsie, NY, United States of America

Alvin P Short