Agilent Technologies Texas Instruments Incorporated

Alvin L S Loke

Scott Robert Summerfelt

Luigi Colombo

Shawming Ma

Theodore Sidney Moise

Stephen Roy Gilbert

Jun Amano

Guoqiang Xing

Tomoyuki Sakoda

Rahim Kavari

Laura Wills-Mirkarimi

An embodiment of the instant invention is a method of fabricating a ferroelectric capacitor which is situated over a structure, the method comprising the steps of: forming a bottom electrode on the structure ( of FIG. ), the bottom electrode having a top surface and sides; forming a capacitor dielectric ( of FIG. ) comprised of a ferroelectric material on the bottom electrode, the capacitor dielectric having a top surface and sides; forming a top electrode ( and of FIG. ) on the capacitor dielectric, the top electrode having a top surface and sides, the ferroelectric capacitor is comprised of the bottom electrode, the capacitor dielectric, and the top electrode; forming a barrier layer ( and of FIG. ) on the side of the bottom electrode, the side of the capacitor dielectric, and the side of the top electrode; forming a dielectric layer on the barrier layer and the structure, the dielectric having a top surface and a bottom surface; and performing a thermal step for a duration at a temperature between 400 and 900 C. in an ambient comprised of a gas selected from the group consisting of: argon, nitrogen, and a combination thereof, the step of performing a thermal step being performed after the step of forming the barrier layer.

Method of fabricating a ferroelectric memory cell

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Singapore, Singapore

Alvin L S Loke