Analog Devices International Unlimited Company

Analog Devices Global Unlimited Company

Alp Oguz

Yalcin Alper Eken

Turusan Kolcuoglu

Yusuf Atesal

Celal Avci

Mehmet Arda Akkaya

Atilim Ergul

Huseyin Kayahan

Berktug Ustundag

Systems, devices, and methods related to electrostatic discharge (ESD) protection in radio frequency (RF) switch circuitry are provided. An electrostatic discharge (ESD)-protected radio frequency (RF) switch circuitry includes a common port; at least one terminal port; a switch circuitry coupled between the common port and the at least one terminal port, wherein the switch circuitry comprises one or more transistors connected in a stacked configuration; and a first ESD protection circuitry coupled between a gate of a first transistor of the one or more transistors and a driver circuitry for the first transistor.

Electrostatic discharge (ESD) protection in radio frequency (RF) switch circuitry

System and methods for reducing nonlinearity in radio frequency (RF) circuitries (e.g., RF switch circuitry and/or RF amplifier circuitry) are provided. A high-linearity RF integrated circuit device includes an input port; an output port; nonlinear circuitry arranged on a signal path between the input port and the output port; a shunt path including signal adjustment circuitry; and adjustable nonlinearity generation circuitry coupled to the signal adjustment circuitry, the adjustable nonlinearity generation circuitry including one or more metal-oxide-semiconductor (MOS) devices; and at least one nonlinearity generation activation element connected in parallel with a source terminal and a drain terminal of a first MOS device of the one or more MOS devices and responsive to an activation control signal. The nonlinear circuitry may include at least one of switching circuitry or amplifier circuitry. The shunt path may be coupled to the input port or the output port.

High-linearity radio frequency (RF) switches and amplifiers

Mechanisms for evaluating amplitude for current pulses provided to a transimpedance amplifier (TIA) for current levels beyond the linear range of the TIA where clipping circuit(s) may limit the input voltage of the TIA are disclosed. In one aspect, an example TIA arrangement includes a clipping arrangement that includes multiple clipping circuits. Each clipping circuit can be biased by different bias voltages such that the different clipping circuits are activated at different input current amplitudes. Different clipping circuits can have different impedances, which can result in different recovery time characteristics. With the multiple clipping circuits in clipping arrangements discussed herein, a saturated dynamic range of a TIA can be divided into sub-regions and different pulse widening characteristics for each region may be defined, which may enable determination of amplitude for current pulses provided to the TIA even for current levels beyond the linear range of the TIA.

Transimpedance amplifier with pulse widening

A system and method for operating a high dynamic range analog front-end receiver for long range LIDAR with a transimpedance amplifier (TIA) include a clipping circuit to prevent saturation of the TIA. The output of the clipping circuit is connected via a diode or transistor to the input of the TIA and regulated such that the input voltage of the TIA remains close to or is only slightly above the saturation threshold voltage of the TIA. The regulation of the input voltage of the TIA can be improved by connecting a limiting resistor in series with the diode or transistor. A second clipping circuit capable of dissipating higher input currents and thus higher voltages may be connected in parallel with the first clipping circuit. A resistive element may be placed between the first and second clipping circuits to further limit the input current to the TIA.

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Beyoglu, Turkey

Alp Oguz