Advanced Micro Devices Corporation

Aloysius T Tam

Thomas S Wong

David Jonq Wang

David F Naren

James Jiahua Yu

N Bruce Threewitt

Moon S Kok

May-Lin Lee

Jiunn-Yau Liou

Jim L Michelsen

An integrated electronic memory circuit is provided which includes memory circuitry for storing binary data in an array of memory locations; first data signal providing circuitry for providing input data signals to the memory circuitry, for storage by the memory circuitry as binary data at respective memory locations; and write signal generator circuitry for generating a write signal causing the memory circuitry to accept input data signals from the first data signal providing circuitry for storing in the array.

Integrated electronic memory circuit with internal timing and operable

A digital memory characterized by a plurality of memory cells arranged into a matrix having rows and columns; a row activation circuit for concurrently activating all of the rows of the matrix; and column activation means for concurrently applying either a reset signal or a preset signal to the columns of the matrix. The column activation circuit can include a plurality of digital switches coupled to reset and preset lines associated with each column of the matrix; and reset/preset logic which control the digital switches to selectively couple the reset and preset lines to a constant current source. A complementary, multi-emitter flip-flop memory cell is formed on a semiconductor substrate and includes 'riser' portions.

Digital memory with reset/preset capabilities

An apparatus for storing data for read and write access receiving reset control signals, comprising a plurality of storage blocks, each block including an array of memory units for storing a unit of data is provided that is reset along storage block boundaries. A reset control means, coupled to receive the reset control signals which identify at least one of the storage blocks, is included for generating block reset signals. A means, coupled to the memory units in each storage block and to receive the block reset signals, for resetting the identified block of memory to 0. .

Random access memory device with block reset

A tag buffer having built-in testing capabilities is disclosed. In a single-chip, integrated-circuit design which includes a SRAM, a parity generator and checker, and a comparator, a method and capability of testing the functionality of the SRAM and parity components is defined. For an embodiment in which the SRAM component includes a redundancy scheme for replacing a defective memory array row, a test for determining whether a redundant row has been used is also provided.

Tag buffer with testing capability

A memory comprising a plurality of memory cells, a column decoder, a row decoder, a plurality of shift registers and a multiplexer is provided for addressing the memory cells in a conventional manner or in a high-speed sequential mode. In the sequential mode alternate cells from each of two sets of cells are addressed and their contents provided on a data output line, or data presented to them on a data input line, at a system clock rate which is much faster than the conventional mode.

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Sunnyvale, CA, United States of America

Aloysius T Tam