Harvard College

Triquint Semiconductor Corporation

The United States of America as Represented by the Administrator of the

United States of America as Represented by the Administrator of Nasa

The Aerospace Corporation

Ohio Aerospace Institute

Srs Technologies, Inc.

Nanotech Innovations Corporation

Aloysius F Hepp

Phillip P Jenkins

Andrew R Barron

Andrew N MacInnes

Jerry D Harris

Edward J Simburger

Paul A Gierow

Stephanie Castro

Kulbinder Kumar Banger

James H Matsumoto

Michael B Power

Michael Hyun-Chul Jin

The present invention relates to a simple method for the synthesis of fullerenes using a mixture of liquid metallorganic precursors and liquid organic hydrocarbon solvents wherein the mixture is injected in the form of droplets into a multiple heated zone reactor tube in which the droplets are thermally decomposed and fullerenes are formed. The process is useful for the formation of all types of fullerenes, and in particular yields multi-walled carbon nanotubes (MWNTs) with low defect density and controllable wt % of metal impurity atoms. In particular, a method is disclosed that produces as-grown MWNTs with less than 5 wt % metal impurity atoms. Large classes of metallorganic precursors suitable for use in the process are also identified.

Process and apparatus utilizing mixed ligand organometallic catalysts for in situ growth of high purity, low defect density carbon nanotubes

One or more thin film battery cells are embedded in a multilayer thin film flexible circuit board supporting electronic devices, such as power regulators, for forming an integrated battery and circuit module. The module can be made using conventional thin film processes. The module is well suited for applications where size and space limitations, such as on spacecraft or credit cards, require the use of ultra thin power sources integrated with respective electronic devices and printed circuits.

Integrated thin film battery and circuit module

A single source precursor for depositing ternary I-III-VIchalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VIstoichiometry 'built into' a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VIternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500&#xb0; C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.

Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

Minority carrier device comprising a passivating layer including a Group

A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device is a metal, passivating layer, semiconductor, field-effect transistor. The transistor includes an active layer and thin-film passivating layer on the active layer. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. Source and drain contacts are disposed on the active layer or the passivating layer. A gate contact is disposed on the passivating layer between the source contact and the drain contact.

Metal, passivating layer, semiconductor, field-effect transistor

A method is disclosed for forming a passivating/buffer film on a substrate. The method includes heating the substrate to a temperature which is sufficient to cause a volatilized organometallic precursor to pyrolyze and thereby form a passivating/buffer film on a substrate. The organometallic precursor is volatilized at a precursor source. A carrier gas is directed from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate. The volatilized precursor pyrolyzes and is deposited onto the substrate, thereby forming the passivating/buffer film on the substrate. The passivating/buffer film can be a cubic-phase passivating/buffer film. An oxide layer can also be formed on the passivating/buffer film to thereby form a composite of the substrate, the passivating/buffer film and the oxide layer. Cubic-phase passivating/buffer films formed by the method of the invention can be lattice-matched with the substrate. Electronic or electro-optical circuits or circuit elements can be formed which include passivating/buffer films formed by the method of the invention.

Chemical vapor deposition from single organometallic precursors

Growing community of inventors

Bay Village, OH, United States of America

Aloysius F Hepp