Bayer Aktiengesellschaft

H.c. Starck Gmbh

Bayer Aktiengeselschaft

H.c. Starck Surface Technology and Ceramic Powders Gmbh

Aloys Eiling

Peter Kiemle

Michael Mager

Hans-Peter Baldus

Fritz Rodi

Hendrik Kathrein

Friedrich Jonas

Gunter Buxbaum

Martin Jansen

Stefan Zimmermann

Udo Guntermann

Frank Schrumpf

Gunther Kampf

Jurgen Wiese

Gerd Passing

Ralf Riedel

Martin Schloh

Jürgen Fischer

Richard Pott

Ulrich Wannagat

Adrian Schervan

Lutz Ruwisch

Roland Scholl

Peter Thienel

The invention provides for a cermet powder containing

Metal powder

The present invention relates to boron-containing carbosilanes, a process for their preparation, boron-containing oligo- or polycarbosilazanes, a process for their preparation and their use and silicon borocarbonitride ceramics and a process for their preparation.

Boron-containing carbosilanes, boron-containing oligo or polycarbosilazanes and silicon borocarbonitride ceramics

The present invention relates to mixtures of conducting organic polymers and reaction products of polyfunctional organosilanes, conducting organic-inorganic hybrid materials obtained therefrom, and their use for coating surfaces.

Conducting organic-inorganic hybrid materials

This invention relates to amorphous fibers containing Si, B and N, to a process for the production thereof and to the use thereof, and to composites containing these amorphous fibers and the production thereof.

Amorphous fibres containing Si, B and N, a process for the production

The present invention relates to new carbosilane dendrimers, to a method of preparing them, and to their use.

Carbosilane dendrimers, a method of preparing them and their use

Silicon diimide having a carbon content of at most 0.5% by weight and a chlorine content of at most 20 ppm is prepared by reacting ammonia with organyl amino silane at 50.degree.-300.degree. C. at elevated pressure and is useful as an intermediate for high grade silicon nitride.

Silicon diimide, a process for its preparation and silicon nitride

Acicular magnetic iron oxide pigments are disclosed which have a Co content of 1 to 5% by weight and an FeO content of 5 to 12% by weight. The pigments may optionally contain an additional dopant selected from zinc, phosphate and SiO.sub.2. The pigments are useful in magnetic recording media such as video tapes.

Co-containing magnetic pigments, processes for the production thereof

Magnetic iron oxide pigments useful in magnetic signal recordings having a dependence of coercivity on temperature in the temperature range of from 76K to 298K of less than 0.13 kA/mK and having a coercivity on powder compressed to 0.9 g/cm.sup.3 of greater than 51 kA/m are prepared by coating a magnetic iron oxide core material having the composition FeO.sub.x where x is a number from 1.33 to 1.5 in a first step with a compound containing divalent and trivalent iron having a ratio of Fe(III): Fe(II) from 0.01 to less than 2, and then in a second step coating the pre-coated core with a second coating of a cobalt compound.

Magnetic iron oxide pigments and a process for their preparation

Magnetic iron oxide pigments having a monomolecular coating of a cobalt compound useful in magnetic signal recordings having a dependence of coercivity on temperature in the temperature range of from 76 K to 298 K of less than 0.13 kA/mK and having a coercivity on powder compressed to 0.9 g/cm.sup.3 of greater than 51 kA/m are prepared applying a preliminary coating of Fe.sub.3 O.sub.4 or a bertholloid compound to a magnetic iron oxide core material having the composition FeO.sub.x where x is a number from 1.33 to 1.55 and then covering the preliminary coating with a cobalt compound.

A volatile semiconductor memory module (RAM) is combined with a permanent memory based on an electrically polarizable, preferably ferroelectric, layer within an integrated monolithic module in such a manner that, as a result of a STORE command, the information present in the semiconductor memory is permanently stored by polarization of selected regions of the electrically polarizable layer. In the same way the permanently stored information can be read out again as a result of a RECALL command and returned to the semiconductor memory. Preferably, a ferroelectrically polarizable layer 11 is applied to the semiconductor memory, which layer, in the same way as the semiconductor memory, is provided on its upper side and underside with word and bit lines in the form of strip electrodes, 9,12. The strip electrode system 9 on the underside of the ferroelectric layer 11 simultaneously forms the word or bit line system of the semiconductor memory facing the surface. In this manner each semiconductor memory cell 7 is clearly allocated a non-volatile ferroelectric memory cell 13.

Growing community of inventors

Bochum, Germany

Aloys Eiling