Nvidia Corporation

Rambus Inc.

Alok Gupta

Ian P Shaeffer

Steven Cameron Woo

Thomas J Giovannini

David G Reed

Barry A Wagner

Bruce H Lam

Wishwesh Anil Gandhi

Ram Gummadi

A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

Method and apparatus for calibrating write timing in a memory system

The present invention facilitates efficient and effective utilization of storage management features. In one embodiment, a memory device comprises a memory interface, an ECC generation component, and storage components. The memory interface is configured to receive an access request to an address at which data is stored. The memory interface can also forward responses to the request including the data and ECC information associated with the data. The ECC generation component is configured to automatically establish an address at which the ECC information is stored based upon the receipt of the access request to an address at which data is stored. In one exemplary implementation, the internal establishment of the address at which the ECC information is stored is automatic. The storage components are configured to store the information.

Memory management systems and methods

The present invention facilitates efficient and effective utilization of storage management features. In one embodiment, a system comprises: a storage component, a memory controller, and a communication link. The storage component stores information. The memory controller controls the storage component. The communication link communicatively couples the storage component and the memory controller. In one embodiment, the communication link communicates storage system management information between the memory storage component and memory controller, and communication of the storage system management information does not interfere with command/address information communication and data information communication. In one exemplary implementation, the communication link comprises: a data bus that communicates data; a command/address bus that communicates commands and addresses, wherein the command and the addresses are related to the storage of the data; and a management communication bus that communicates storage system management information.

Memory management systems and methods using a management communication bus

A method for updating a DRAM memory array is disclosed. The method comprises: a) transitioning the DRAM memory array from an idle state to a refresh state in accordance with a command from a memory controller; b) initiating a refresh on the DRAM memory array using DRAM internal control circuitry by activating a row of data into an associated sense amplifier buffer; and c) during the refresh, performing an ERR Correction Code (ECC) scrub operation of selected bits in the activated row of the DRAM memory array.

Controller-based memory scrub for DRAMs with internal error-correcting code (ECC) bits contemporaneously during auto refresh or by using masked write commands

One embodiment of the present invention sets forth a method for accessing non-contiguous locations within a DRAM memory page by sending a first column address command to a first DRAM device using a first subset of pins and sending a second column address command to a second DRAM device using a second subset of repurposed pins. The technique requires minimal additional pins, space, and power consumption. Further, sending multiple column address commands allows for increased granularity of DRAM accesses and therefore more efficient use of pins. The technique for accessing non-contiguous locations within a DRAM memory page.

Address bit remapping scheme to reduce access granularity of DRAM accesses

In one embodiment, a method for updating a DRAM memory array is disclosed. The method comprises: a) transitioning the DRAM memory array from an idle state to a self-refresh state after a period of inactivity; b) initiating a refresh on the DRAM memory array using DRAM internal control circuitry; and c) during the refresh, performing an Error Correction Code (ECC) scrub operation of selected bits in an activated row of the DRAM memory array.

Method for scrubbing and correcting DRAM memory data with internal error-correcting code (ECC) bits contemporaneously during self-refresh state

One embodiment sets forth a technique for time-multiplexed communication for transmitting command and address information between a controller and a multi-port memory device over a single connection. Command and address information for each port of the multi-port memory device is time-multiplexed within the controller to produce a single stream of commands and addresses for different memory requests. The single stream of commands and addresses is transmitted by the controller to the multi-port memory device where the single stream is demultiplexed to generate separate streams of commands and addresses for each port of the multi-port memory device.

Time-multiplexed communication protocol for transmitting a command and address between a memory controller and multi-port memory

A method for updating a DRAM memory array is disclosed. The method comprises: a) receiving a command from a memory controller to initiate an active cycle for activating a memory row in a DRAM memory array; b) performing an Error Correction Code (ECC) scrub on the memory row prior to reading data from the memory row into sense amplifiers in the DRAM memory array in accordance with the command to activate; c) activating the memory row; and d) writing corrected data following the ECC scrub back into memory from the sense amplifiers during a pre-charge cycle of the DRAM memory array.

Growing community of inventors

Fremont, CA, United States of America

Alok Gupta