Infineon Technologies Ag

Siemens Aktiengesellschaft

Alois Nitsch

Horst Baumeister

Rainer Tilgner

Heinz Peters

Vassilios Kalivas

A method for detecting a crack in a semiconductor wafer, which includes an electrical device and a connecting pad electrically coupled with the electrical device, is described. The crack is detected by an acoustic detector being acoustically coupled to the semiconductor wafer during contacting the contacting pad with a probe.

Method and apparatus for detecting a crack in a semiconductor wafer, and a wafer chuck

A semiconductor device includes a first die, a substrate, and a first interconnect. The first die includes a first isolation region and a first contact at least partially overlapping the first isolation region. The substrate includes a second contact. The first interconnect couples the first contact to the second contact. The first interconnect is defined by a via through the first isolation region.

Semiconductor device including an interconnect

A ceramic substrate secured with a flexible adhesive to a first side of a printed circuit board that belongs to a module and has circuit structures is provided. The ceramic substrate is contacted to the circuit structures with bond connections. The terminal elements are formed by approximately spherical accumulations of solder attached on the backside of the printed circuit board, these solder accumulations being connected to the circuit structures on the first side of the printed circuit board via through-contactings.

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Munich, Germany

Alois Nitsch