Texas Instruments Corporation

Allen Y Chen

Rohit L Bhuva

Robert A Helmick

Walter C Bonneau, Jr

Robert L Gruebel

A circuit (90) converts a true ECL signal to a true TTL signal. The circuit includes a differential circuit (180) that receives an ECL signal having high and low values. The differential circuit produces a differential signal therefrom that has a high value in response to one of the high and low values of the true ECL signal, and a low value in response to the other of the high and low values of the true ECL signal. A first translator circuit (36, 64) has an input (32) coupled to the differential circuit (180). The first translator circuit (36, 64) transmits a true low TTL output (56) signal having a voltage level referenced to the voltage level of a TTL low supply voltage in response to receiving a high value of the differential signal. A second translator circuit (46, 52) has an input (38) and is coupled to a TTL high supply voltage and the output (56). An input signal appearing on the input (38) of the second translator circuit has a voltage level related to the voltage level of the differential signal (32). The second translator circuit (46, 52) transmits a high TTL output signal having a voltage level referenced to the voltage level of the TTL high supply voltage in response to the differential signal (32) being at a low value.

ECL/TTL conversion circuit and translation programmable array logic

A programmable memory includes a memory matrix (34) with a row decode circuit (36) and a column decode circuit (48) operable in the program mode to select one of the memory elements in the memory matrix (34). A current boost circuit (50) is operable to provide increased current to the selected cell such that selection of the cell opens the fuse associated therewith to change the logic state. The pins associated with the column and row addresses have multiple mode functions such that in the normal operating mode they can be assigned other tasks and in the programming mode are utilized primarily for addressing of the memory cells.

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Allen Y Chen