Taiwan Semiconductor Manufacturing Comp. Ltd.

Allen Timothy Chang

Chun-Ren Cheng

Jui-Cheng Huang

Yi-Hsien Chang

Yu-Jie Huang

Ching-Ray Chen

Yi-Shao Liu

Wen-Chuan Tai

Tsung-Tsun Chen

Chun-Wen Cheng

Tung-Tsun Chen

Hsiang-Fu Chen

Chia-Ming Hung

Hsin-Ting Huang

Shao-Chi Yu

Yi-Hsing Hsiao

Chia-Hua Chu

Bruce C S Chou

Chin-Min Lin

Yeh-Tseng Li

Wen-Hsiang Lin

Penny Hsiao

Jung-Huei Peng

Yuan-Chih Hsieh

Shang-Ying Tsai

Lan-Lin Chao

Hung-Hua Lin

Jiou-Kang Lee

Ting-Hau Wu

Hua-Shu Ivan Wu

Kai-Chih Liang

Alex Kalnitsky

Mingo Liu

Li-Cheng Chu

Li-Chun Peng

Yi-hsien Chang

Tsung-Cheng Huang

Nick Y M Shen

Emerson Cheng

A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; and a cap structure attached to the buried oxide layer, the cap structure comprising a microneedle.

Biosensor system with integrated microneedle

In an embodiment, a circuit includes: an error amplifier; a temperature sensor, wherein the temperature sensor is coupled to the error amplifier; a discrete time controller coupled to the error amplifier, wherein the discrete time controller comprises digital circuitry; a multiple bits quantizer coupled to the discrete time controller, wherein the multiple bits quantizer produces a digital code output; and a heating array coupled to the multiple bits quantizer, wherein the heating array is configured to generate heat based on the digital code output.

Discrete time loop based thermal control

In an embodiment, a device includes: an electrode configured to change a contact angle of a liquid droplet above the electrode when a first voltage is applied to the electrode; a sensing film overlaying the electrode, wherein the electrode is configured for assessment of a state of the liquid droplet based on a second voltage sensed at the electrode; a reference electrode above the electrode, the reference electrode configured to provide a reference voltage; and a microfluidic channel between the electrode and the reference electrode, wherein the microfluidic channel is configured to manipulate the liquid droplet using the electrode.

Integrated biological sensing platform

An integrated semiconductor device for manipulating and processing bio-entity samples and methods are described. The device includes a lower substrate, at least one optical signal conduit disposed on the lower substrate, at least one cap bonding pad disposed on the lower substrate, a cap configured to form a capped area, and disposed on the at least one cap bonding pad, a fluidic channel, wherein a first side of the fluidic channel is formed on the lower substrate and a second side of the fluidic channel is formed on the cap, a photosensor array coupled to sensor control circuitry, and logic circuitry coupled to the fluidic control circuitry, and the sensor control circuitry.

Optical detection for bio-entities

A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; a carrier substrate on the MLI structure; a first through substrate via (TSV) structure extending though the carrier substrate and configured to provide an electrical connection between the MLI structure and a separate die; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; and a microfluidic channel cap structure attached to the buried oxide layer.

Wafer-level packaging of solid-state biosensor, microfluidics, and through-silicon via

A biosensor apparatus comprises a biosensor device and a cover that is configured to attach to the biosensor device. The biosensor device includes a surface section that is disposed above the user's skin and an implantable section that is injected into the user's skin. The implantable section includes a bending detector and sensing circuitry. The sensing circuitry includes one or multiples of a biomarker sensor array, a control biomarker sensor array, a temperature sensor, and/or a biofouling detector.

Biosensor apparatus

The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.

Method for forming biochips and biochips with non-organic landings for improved thermal budget

A sensor with a nanowire heater may be provided. The sensor may be patterned in a device layer of a Silicon on Insulation (SOI) wafer comprising a backside layer and a Buried Oxide (BOX) layer and the nanowire heater may be patterned in the device layer of the SOI wafer adjacent to the sensor. Next, metal routing may be created for the SOI wafer and a bond carrier wafer may be provided on a metal routing side of the SOI wafer. The backside layer may then be ground until the BOX layer is exposed. Then the device layer may be patterned through the BOX layer to expose the sensor and the nanowire heater. A dielectric may be deposited covering at least one of the following: the sensor; and the nanowire heater.

Sensor with nanowire heater

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Hsinchu, Taiwan

Allen Timothy Chang