Exogenesis Corporation

Epion Corporation

Tel Epion Corporation

Exogensis Corporation

Allen R Kirkpatrick

Sean R Kirkpatrick

Michael J Walsh

Wesley J Skinner

Richard C Svrluga

Jerald P Dykstra

David J Mount

John J Hautala

Martin D Tabat

Jiro Matsuo

Isao Yamada

Joseph B Khoury

Robert K Becker

Avrum Freytsis

John O Borland

Thomas G Tetreault

Vincent DiFilippo

Teruyuki Kitagawa

James G Bachand

An improved ANAB system or process substantially or fully eliminating contaminant particles from reaching a beam target by adding to the usual primary (first) ionizer of the ANAB system or process an additional (second) ionizer to ionize contaminant particles and means to block or retard the ionized particles to prevent their reaching the beam target.

Method and apparatus to eliminate contaminant particles from an accelerated neutral atom beam and thereby protect a beam target

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

Method and apparatus for neutral beam processing based on gas cluster ion beam technology

A device such as a medical device and a method for making same provides a surface modified by beam irradiation, such as a gas cluster ion beams or a neutral beam, to inhibit or delay attachment or activation or clotting of platelets.

Treatment method for inhibiting platelet attachment and articles treated thereby

A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby

A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.

Apparatus and methods are disclosed for employing an accelerated neutral beam derived from an accelerated gas cluster ion beam as a physical etching beam for providing reduced material mixing at the etched surface, compared to previous techniques. This results in the ability to achieve improved depth profile resolution in measurements by analytical instruments such as SIMS and XPS (or ESCA) analytical instruments.

Methods and apparatus for employing an accelerated neutral beam for improved surface analysis

A method of treating a surface of a silicon substrate forms an accelerated gas cluster ion beam of carbon atoms, promotes fragmentation and/or dissociation of gas cluster ions in the beam, removes charged particles from the beam to form a neutral beam, and treats a portion of a surface of the silicon substrate by irradiating it with the neutral beam. A silicon substrate surface layer of SiC(0.05&#x3c;X&#x3c;3) formed by accelerated and focused Neutral Beam irradiation of a silicon substrate wherein the Neutral Beam is derived from a gas cluster ion beam which has had its cluster ions dissociated and charged particles removed.

Method and apparatus for neutral beam processing based on gas cluster ion beam technology and articles produced thereby

A method of improving the surface of an object treats the surface with a neutral beam formed from a gas cluster ion mean to create a surface texture and/or increase surface area.

An apparatus and method for characterizing a particle beam provides receiving a particle beam in a central region of a reduced pressure enclosure; impacting the received beam against a beam strike that is thermally isolated from the enclosure; measuring a temperature change of the beam strike due to the impacting beam; measuring a pressure change in the enclosure due to receiving the beam; and processing the measured temperature change and the measured pressure change to determine beam characteristics.

Diagnostic method and apparatus for characterization of a neutral beam and for process control therewith

Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation

Numerous studies suggest that the current popular designs of coronary stents are functionally equivalent and suffer a 16 to 22 percent rate of restenosis. Although the use of coronary stents is growing, the benefits of their use remain controversial in certain clinical situations or indications due to their potential complications. The application of gas cluster ion beam (GCIB) surface modification such as smoothing or cleaning appears to reduce these complications and lead to genuine cost savings and an improvement in patient quality of life. The present invention is directed to the use of GCIB surface modification to overcome prior problems of thrombosis and restenosis. The atomic level surface smoothing of stents utilizing GCIB substantially reduces undesirable surface micro-roughness in medical coronary stents.

Growing community of inventors

Carlisle, MA, United States of America

Allen R Kirkpatrick