International Business Machines Corporation

Allen J Dam

Jon Alfred Casey

Charles Hampton Perry

James N Humenik

Robert W Nufer

Anthony Mastreani

Arnold I Baise

Salvatore J Scilla

Werner E Dunkel

Ray M Bryant

John Ulrich Knickerbocker

Sarah Huffsmith Knickerbocker

Lawrence D David

Srinivasa S Reddy

Ajay Prabhakar Giri

Mark A Takacs

John Acocella

Steven M Kandetzke

George Czornyj

Renuka S Divakaruni

Richard A Bates

Peter A Agostino

Daniel P Kirby

Lovell B Wiggins

David R Clarke

Liang-Choo Hsia

Amy T Matts

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Process for fabricating a low dielectric composite substrate

Low dielectric composite substrate

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

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Allen J Dam