Alpha Omega Semiconductor Inc.

Allen Chang

Wai-Keung Peter Cheng

Zhiye Zhang

Jun Lu

Xiaotian Zhang

Kuang Ming Chang

Gilbert Lee

Mark Tomas

Zhinan Wei

Anup Bhalla

François Hébert

Xiaobin Wang

Behzad Mohtashemi

Son Tran

Man Sheng Hu

Kevin Ng

Kenny Man Sheng Hu

A fault tolerant power supply system includes at least one load switch circuit configured to connect, using a main switch, an input voltage to an output node of the load switch circuit when the load switch circuit is turned on and at least one power channel coupled to the load switch circuit to receive the input voltage. The power channel is configured as a buck converter and includes at least a high-side power switch and a low-side power switch. The fault tolerant power supply system is configured to measure a current flowing through the main switch of the load switch circuit, to determine that the current flowing through the main switch of the load switch circuit has exceeded a current limit threshold, and to disable the main switch of the load switch circuit and the low-side power switch of the power channel in response to the determination that the current flowing in the main switch has exceeded the current limit threshold.

Fault tolerant power supply incorporating intelligent load switch to provide uninterrupted power

A fault tolerant power supply system includes at least one load switch configured to connect an input voltage to an output node of the load switch when the load switch is turned on and at least one power channel coupled to the load switch to receive the input voltage. The power channel is configured as a buck converter and includes at least a high-side power switch and a low-side power switch. The fault tolerant power supply system is configured to measure a current flowing through the low-side power switch, to determine that the current flowing through the low-side power switch has exceeded a current limit threshold, and to disable the low-side power switch and the load switch in response to the determination that the current flowing in the low-side power switch has exceeded the current limit threshold.

Fault tolerant power supply incorporating intelligent gate driver-switch circuit to provide uninterrupted power

A switching regulator controller for a buck switching regulator incorporates a multi-mode adaptive modulator configured to automatically select between a first operation mode and a second operation mode as a function of the output voltage being generated. In one embodiment, the switching regulator controller compares the output voltage to a comparator reference voltage and is configured to operate in a selected operation mode based on the output voltage. In this manner, a single switching regulator controller can be used in multiple instances of an electronic system to supply circuitry that may have different operational requirements. In one embodiment, the switching regulator controller is configured to operation in a PWM/PFM mode and a PWM mode as a function of the output voltage, which indicates the circuit application to which the switch regulator controller is used to supply.

Switching regulator with adaptive PWM/PFM modulator

A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor. The low voltage controller integrated circuit and the high voltage, vertical, discrete field effect transistor are packaged together in a single package on a common electrically conductive die pad, wherein the controller IC is attached to the die pad using insulating adhesive and the FET is attached to the die pad using conductive adhesive.

Boost converter with integrated high power discrete FET and low voltage controller

A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad. The bottom cathode is electrically connected to the common die pad. It is emphasized that this abstract is being provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. This abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

High voltage and high power boost converter with co-packaged Schottky diode

A method for generating an oscillator signal uses a multiphase oscillator having a plurality of input stages and a reference stage. Each input stage produces an input stage voltage that represents a phase for the oscillator. The input stage voltages produced by each of the input stages are compared to a reference voltage produced by the reference stage. An input stage having a maximum input stage voltage is selected and an output of the selected input stage having the maximum input stage voltage is changed. A current need of the oscillator is detected with a negative feedback loop coupled to the reference stage. An appropriate supply current is provided to each input stage with the negative feedback loop.

Flexible low current oscillator for multiphase operations

A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package on separate electrically isolated die pads.

A battery protection package assembly is disclosed. The assembly includes a power control integrated circuit (IC) with pins for a supply voltage input (VCC) and a ground (VSS) on a first side of the power control IC. First and second common-drain metal oxide semiconductor field effect transistors (MOSFETs) are electrically coupled to the power control IC. The power control IC and the first and second common-drain metal oxide semiconductor field effect transistors (MOSFET) are co-packaged on a common die pad. The power control IC is vertically stacked on top of one or more of the first and second common-drain MOSFETs. Leads coupled to a supply voltage input (VCC) and a ground (VSS) of the power control IC are on a first side of the common die pad.

Stacked-die package for battery power management

A high voltage and high power boost converter is disclosed. The boost converter includes a boost converter IC and a discrete Schottky diode, both of which are co-packaged on a standard single common die pad.

A DC-DC buck converter in multi-die package is proposed having an output inductor, a low-side Schottky diode and a high-side vertical MOSFET controlled by a power regulating controller (PRC). The multi-die package includes a first die pad with the Schottky diode placed there on side by side with the vertical MOSFET. The PRC die is attached atop the first die pad via an insulating die bond. Alternatively, the first die pad is grounded. The vertical MOSFET is a top drain N-channel FET, the substrate of Schottky diode die is its anode. The Schottky diode and the vertical MOSFET are stacked atop the first die pad. The PRC is attached atop the first die pad via a conductive die bond. The Schottky diode die can be supplied in a flip-chip configuration with cathode being its substrate. Alternatively, the Schottky diode is supplied with anode being its substrate without the flip-chip configuration.

Multi-die DC-DC buck power converter with efficient packaging

A semiconductor package assembly may include a lead frame having a die bonding pad and plurality of leads coupled to the first die bonding pad. A vertical semiconductor device may be bonded to the die bonding pad. The device may have a conductive pad electrically connected to one lead through a first bond wire. An electrically isolated conductive trace may be formed from a layer of conductive material of the first semiconductor device. The conductive trace provides an electrically conductive path between the first bond wire and a second bond wire. The conductive path may either pass underneath a third bond wire thereby avoiding the third bond wire crossing another bond wire, or the conductive path may result in a reduced length for the first and second bond wires that is less than a predetermined maximum length.

Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package

A boost converter for high power and high output voltage applications includes a low voltage controller integrated circuit and a high voltage, vertical, discrete field effect transistor, both of which are packed in a single package.

A stacked-die package for battery protection is disclosed. The battery protection package includes a power control integrated circuit (IC) stacked on top of integrated dual common-drain metal oxide semiconductor field effect transistors (MOSFETs) or two discrete MOSFETs. The power control IC is either stacked on top of one MOSFET or on top of and overlapping both two MOSFETs.

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Fremont, CA, United States of America

Allen Chang