Growing community of inventors

San Jose, CA, United States of America

Allahyar Vahidimowlavi

Average Co-Inventor Count = 2.44

ph-index = 4

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 42

Allahyar VahidimowlaviVishal Sarin (10 patents)Allahyar VahidimowlaviKalyan C Kavalipurapu (6 patents)Allahyar VahidimowlaviFrankie F Roohparvar (3 patents)Allahyar VahidimowlaviChristophe J Chevallier (3 patents)Allahyar VahidimowlaviViolante Moschiano (3 patents)Allahyar VahidimowlaviTommaso Vali (3 patents)Allahyar VahidimowlaviGiovanni Santin (3 patents)Allahyar VahidimowlaviEbrahim Abedifard (2 patents)Allahyar VahidimowlaviUday Chandrasekhar (2 patents)Allahyar VahidimowlaviErwin E Yu (2 patents)Allahyar VahidimowlaviFeng Q Pan (1 patent)Allahyar VahidimowlaviShigekazu Yamada (1 patent)Allahyar VahidimowlaviJae-Kwan Park (1 patent)Allahyar VahidimowlaviCairong Hu (1 patent)Allahyar VahidimowlaviAllahyar Vahidimowlavi (22 patents)Vishal SarinVishal Sarin (172 patents)Kalyan C KavalipurapuKalyan C Kavalipurapu (24 patents)Frankie F RoohparvarFrankie F Roohparvar (512 patents)Christophe J ChevallierChristophe J Chevallier (311 patents)Violante MoschianoViolante Moschiano (182 patents)Tommaso ValiTommaso Vali (143 patents)Giovanni SantinGiovanni Santin (110 patents)Ebrahim AbedifardEbrahim Abedifard (128 patents)Uday ChandrasekharUday Chandrasekhar (28 patents)Erwin E YuErwin E Yu (24 patents)Feng Q PanFeng Q Pan (102 patents)Shigekazu YamadaShigekazu Yamada (74 patents)Jae-Kwan ParkJae-Kwan Park (20 patents)Cairong HuCairong Hu (1 patent)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Micron Technology Incorporated (19 from 37,905 patents)

2. Intel Corporation (2 from 54,664 patents)

3. Lodestar Licensing Group LLC (1 from 77 patents)


22 patents:

1. 12322444 - Memory devices with controlled wordline ramp rates, and associated systems and methods

2. 11948644 - Two-part programming of memory cells

3. 11222699 - Two-part programming methods

4. 11004513 - Memory devices with controlled wordline ramp rates, and associated systems and methods

5. 10770145 - Two-part programming methods

6. 10546641 - Memory devices with controlled wordline ramp rates, and associated systems and methods

7. 10249365 - Two-part programming methods

8. 10049759 - Reducing verification checks when programming a memory device

9. 9858991 - Two-part programming methods

10. 9842655 - Reducing verification checks when programming a memory device

11. 9502101 - Two-part programming methods

12. 9443610 - Leakage current detection

13. 9087600 - Two-part programming methods

14. 9025388 - Method for kink compensation in a memory

15. 8553461 - Method for kink compensation in a memory

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