Stmicroelectronics S.r.l.

Stmicroelectronics (grenoble 2) Sas

Alin Razafindraibe

Antonino Conte

Francesco Tomaiuolo

Thibault Mortier

In an embodiment, a non-volatile memory device is proposed. The device includes a plurality of local pull-up stages distributed along a group of memory portions in a memory array. Each local pull-up stage includes, for each wordline that extends through the group of memory portions, a corresponding local pull-up transistor of an NMOS type. The local pull-up transistors of each local pull-up are configured to locally decouple the corresponding wordline from a node at a first reference potential in response to a wordline that extends through the group of memory portions being selected, and locally couple the corresponding wordline to the node at the first reference potential in response to all the wordlines that extend through the group of memory portions being deselected to restore locally a deselection voltage on a wordline previously selected.

Non-volatile phase-change memory device including a distributed row decoder with n-channel MOSFET transistors and related row decoding method

In an embodiment, a non-volatile memory device includes a memory array including a plurality of memory portions, each memory portion having a respective plurality of memory cells arranged in rows and columns, wherein the memory portions are arranged in groups, each group of memory portions having a plurality of respective memory portions arranged in a row and a plurality of respective wordlines that extend through the respective memory portions, and wherein the memory cells of the memory portions of the group are coupled to the respective wordlines and a row decoder including a pre-decoding stage configured to execute a selection, in which it selects a wordline that extends through a group of memory portions and deselects other wordlines that extend through the group of memory portions, and a subsequent deselection, in which it deselects all the wordlines that extend through the group of memory portions, wherein the row decoder further includes, for each group of memory portions, a shared pull-up stage configured to decouple from or couple to a node at a first reference potential each wordline that extends through the group of memory portions, when the wordline is respectively selected or deselected, so as to impose on each wordline, when deselected, a deselection voltage, a plurality of pull-down stages distributed along the group of memory portions, each pull-down stage being configured to locally couple each wordline that extends through the group of memory portions, when selected, to a node at a second reference potential, so as to impose locally a selection voltage on the wordline, wherein each pull-down stage is further configured to locally decouple from the node at the second reference potential each wordline that extends through the group of memory portions, when deselected; and a number of local pull-up stages distributed along the group of memory portions, each local pull-up stage having, for each wordline that extends through the group of memory portions, a corresponding local pull-up transistor of an NMOS type.

Growing community of inventors

Saint Martin d'Hères, France

Alin Razafindraibe