Infineon Technologies Ag

Alim Karmous

Anton Mauder

Hans-Juergen Thees

Thorsten Arnold

A power semiconductor device includes an active region with power cells, each configured to conduct a load current portion between first and second load terminals. Each power cell includes: trenches and mesas laterally confined by the trenches and in a vertical direction adjoining a drift region. The mesas include an active mesa having a source region of a first conductivity type and a body region of a second conductivity type separating the source region from the drift region. Both the source and body region are electrically connected to the first load terminal. At least one trench adjacent to the active mesa is configured to induce a conductive channel in the active mesa. A punch through structure s electrically separated from the active mesa by at least one separation stack.

Power semiconductor device and method of producing a power semiconductor device

A voltage-controlled switching device includes a drain/drift region of a first conductivity type formed in a semiconductor portion. A channel region and the drain/drift region are in direct contact with each other. A source region of a second conductivity type and the channel region are in direct contact with each other. A gate electrode and the channel region are capacitively coupled and configured such that, in a an on-state of the voltage-controlled switching device, a first enhancement region of charge carriers corresponding to the first conductivity type forms in the channel region and band-to-band tunneling is facilitated between the source region and the first enhancement region.

Voltage-controlled switching device with channel region

A power semiconductor device includes: a semiconductor body having a first surface and a mesa portion that includes a surface part of the first surface and a body region; at least two trenches extending from the first surface into the semiconductor body along a vertical direction, each trench including a trench electrode and trench insulator insulating the trench electrode from the semiconductor body, the mesa portion being laterally confined by the trenches in a first vertical cross-section along a first lateral direction; and a contact plug in contact with the body region. The contact plug and trench electrode of a first trench laterally overlap at least partially in the first vertical cross-section. A protection structure having a portion arranged within the first trench is arranged between the contact plug and trench electrode of the first trench. The protection structure may be an electrically insulation structure or a protective device structure.

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Dresden, Germany

Alim Karmous