Samsung Electronics Co., Ltd.

Aliaksei Ivaniukovich

Yong-kyu Lee

Kwan-young Kim

Bo-young Seo

Hong-kook Min

Choong-jae Lee

Hui-chul Shin

Mi-jin Han

An integrated circuit device includes a bulk substrate including a first conductivity type well and a second conductivity type drift region, a stack pattern disposed on the bulk substrate and including a buried insulation pattern on the second conductivity type drift region and a semiconductor body pattern on the buried insulation pattern, a gate insulation layer on an upper surface of the first conductivity type well and on a sidewall and an upper surface of the stack pattern, and a gate electrode on the gate insulation layer. The gate electrode includes a first gate portion opposite to the first conductivity type well with the gate insulation layer therebetween and a second gate portion opposite to the second conductivity type drift region with the gate insulation layer and the stack pattern therebetween.

Integrated circuit device

A semiconductor device comprises a magneto-resistive device capable of performing multiple functions with low power. The semiconductor device comprises a cell transistor in which a first impurity region and a second impurity region are respectively arranged on both sides of a channel region in a channel direction, a source line connected to the first impurity region of the cell transistor, and the magneto-resistive device connected to the second impurity region of the cell transistor. The first impurity region and the second impurity region are asymmetrical about a center of the cell transistor in the channel direction with respect to at least one of a shape and an impurity concentration distribution.

Semiconductor device including magneto-resistive device

Growing community of inventors

Yongin-si, South Korea

Aliaksei Ivaniukovich