University of California

Microsanj, LLC

Other

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Ali Shakouri

John E Bowers

Peidong Yang

Rong Fan

Timothy David Sands

Richard E Russo

Samuel S Mao

Arun Majumdar

Eicke R Weber

Hannes Kind

Haoquan Yan

Yiying Wu

Henning Feick

Michael Huang

Hamid Reza Piroozi

Dustin Kendig

James Christofferson

Bin Liu

Peyman Milanfar

Nobuhiko P Kobayashi

Marc Plissonnier

Arthur Charles Gossard

Yan Zhang

Kenneth D Pedrotti

Xi Wang

Natalio Mingo Bisquert

Patrick Abraham

Kazuaki Yazawa

Zhixi Bian

Joshua M O Zide

Travis Kemper

Virginia Martin Hériz

Christopher J LaBounty

Boo-Gyoun Kim

Nobuhiko Kobayashi

An infrared (IR) digital lens (IR Objective) for an optical microscope is disclosed which includes a body, configured to be mounted to an objective interface of an optical microscope, an IR camera disposed in the body, the IR camera configured to receive light in the range of IR and capture images from a specimen disposed under the body without the need to move the specimen from the optical microscope.

Microscope mounted infrared digital thermal image system

A method for providing a high spatial resolution thermal imaging of an active electronic device. The method includes placing an electronic device on a testing stage of an imaging system. The method, calibrating the imaging system by determining thermoreflectance coefficient for a plurality of pixels forming thermal images, each pixel having a coordinate (x,y) captured from the electronic device at each of a plurality of wavelengths of illumination (C(x,y,&#x3bb;), activating the electronic device, and determining changes in reflection for each of the plurality of pixels at each of the plurality of wavelengths (&#x394;R/R), determining &#x394;R/R vs. C(x,y,&#x3bb;) for each of the plurality of pixels for each of the plurality of wavelengths, fitting &#x394;R/R vs. C(x,y,&#x3bb;) to a predetermined mathematical function and use the parameters to calculate the temperature at each pixel.

Hyperspectral thermoreflectance imaging

A method for determining change in temperature of an electromagnetically radiating device between un-energized and energized states without contacting the device is disclosed. The method includes establishing a reference image form the device by illuminating the device with an optical signal having a first optical characteristic and capturing the reference image from the device in an un-energized state, establishing an on image form the device by illuminating the device in an energized state, and establishing a modified on image form the device by illuminating the device in the energized state with a modified optical signal having a third illuminating optical characteristic, and comparing the reference image, the on image, and the modified on image to establish changes in reflection as a result of changes in temperature of the device during energization.

Method and system for thermal imaging with optical emissions from a device under test

A method for determining change in temperature of different parts of an electronic or optoelectronic device between un-energized and energized states without contacting the device. The method includes establishing a reference image form an unexcited device by illuminating the device with an optical signal and capturing the reference image from the device in an un-energized state, illuminating the device with an optical signal during an energization pulse having a predetermined pulse width and pulse magnitude and capturing a plurality of on images from the device at different time delays, determining a transient temperature profile, calibrating the temperature profile for one or more regions of the device with unknown thermoreflectance coefficient based on the determined transient temperature profile for the one or more regions of the device with known thermoreflectance coefficient.

Method and system for calibrating thermal imaging systems

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as 'nanowires', include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

Solar energy collection and storage systems and processes of using such systems. Non-direct solar energy collection and storage systems can generate electricity from solar radiation using a solar thermoelectric generator and at the same time capture solar thermal energy in a working fluid. The working fluid can then transfer the heat to a thermal storage medium where the heat can be retrieved on demand to generate electricity and heat a fluid. Direct solar energy collection and storage systems can store solar thermal energy in a thermal storage medium directly from solar radiation and the heat from the thermal storage medium can be used on demand to generate electricity and heat a fluid.

Effective and scalable solar energy collection and storage

Composite epitaxial materials that comprise semimetallic ErAs nanoparticles or nanoislands epitaxially embedded in a semiconducting InGaAs matrix both as superlattices and randomly distributed throughout the matrix are disclosed. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. Electron concentration, mobility, and Seebeck coefficient of these materials are discussed and their potential for use in thermoelectric power generators is postulated. These composite materials in accordance with the present invention have high electrical conductivity, low thermal conductivity, and a high Seebeck coefficient. The ErAs nanoislands provides additional scattering mechanism for the mid to long wavelength phonon&#x2014;the combination reduces the thermal conductivity below the alloy limit.

High efficiency thermoelectric materials based on metal/semiconductor nanocomposites

Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity.

SiGe matrix nanocomposite materials with an improved thermoelectric figure of merit

The temperature distribution associated with a design of an integrated circuit is calculated by convoluting a surface power usage represented by a power matrix with a heat spreading function. The heat spreading function may be calculated from a simulation of a point source on the integrated circuit using a finite element analysis model of the integrated circuit or other techniques. To account for spatial variations on the chip, the heat spreading function may be made dependent on position using a position scaling function. Steady-state or transient temperature distributions may be computed by using a steady-state or transient heat spreading function. A single heat spreading function may be convolved with various alternative power maps to efficiently calculate temperature distributions for different designs. In an inverse problem, one can calculate the power map from an empirically measured temperature distribution and a heat spreading function using various de-convolution techniques. While the forward problem is analogous to image blurring, the inverse problem is analogous to image restoration.

Efficient method to predict integrated circuit temperature and power maps

Methods and apparatus for non-contact thermal measurement which are capable of providing sub micron surface thermal characterization of samples, such as active semiconductor devices. The method obtains thermal image information by reflecting a light from a surface of a device in synchronous with the modulation of the thermal excitation and then acquiring and processing an AC-coupled thermoreflective image. The method may be utilized for making measurements using different positioning techniques, such as point measurements, surface scanning, two-dimensional imaging, and combinations thereof. A superresolution method is also described for increasing the resultant image resolution, based on multiple images with fractional pixel offsets, without the need to increase the resolution of the image detectors being utilized. The thermoreflective method provides a spatial resolution better than current infrared cameras, operates within a wide temperature range, and is capable of a thermal resolution on the order of 10 mK&#xb0;.

Submicron thermal imaging method and enhanced resolution (super-resolved) AC-coupled imaging for thermal inspection of integrated circuits

Nanowires, nanostructures and devices fabricated therefrom

Growing community of inventors

Santa Cruz, CA, United States of America

Ali Shakouri