Micron Technology Incorporated

Asm IP Holding B.v.

Ali Moballegh

Vassil N Antonov

Manuj Nahar

Darwin Franseda Fan

Alexandros Demos

Caleb Miskin

Amir Kajbafvala

Peter Westrom

Tomas Hernandez Acosta

A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

Gas injection system and reactor system including same

A transistor comprises a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region. An upper material is directly above a lower material. The upper material is in at least one of the top source/drain region, the bottom source/drain region, and the channel region. The lower material is in at least one of the top source/drain region, the bottom source/drain region, and the channel region. The upper material comprises 1 atomic percent to 10 atomic percent elemental-form H and 0 total atomic percent to less than 0.1 total atomic percent of one or more noble elements. The lower material comprises 0 atomic percent to less than 1 atomic percent elemental-form H and 0.1 total atomic percent to 10 total atomic percent of one or more noble elements. Other embodiments, including method, are disclosed.

Transistor and methods of forming transistors

Growing community of inventors

Chandler, AZ, United States of America

Ali Moballegh