The Penn State Research Foundation

Ali Kaan Kalkan

Stephen J Fonash

Robert H Detig

Daniel Hayes

Joseph D Cuiffi

Sanghoon Bae

Wook Jun Nam

Yinghui Shan

Chih-Yi Peng

Paul Butterfoss

Reece Kingi

A non-vacuum-based, non-collodial chemistry-based method of synthesizing metal nanoparticles and nanoparticle-nanostructured material composites obtained by that method. An embodiment of the method of this invention for fabricating a nanoparticle-nanostructured material composite and synthesizing nanoparticles includes preparing a nanostructured/nanotextured material, and, contacting the nanostructured/nanotextured material with a solution. Nanoparticles are synthesized on the nanostructured/nanotextured material as a result of the contact. The method of the present invention can be utilized to fabricate SPR and SERS substrates for sensing and detection. Additional systems based on this approach (e.g., surface plasmon resonance absorption and alloying sensors and nanocatalysts) are described.

Nanoparticle coated nanostructured surfaces for detection, catalysis and device applications

An electronic or opto-electronic device or a chemical sensor comprising: an interpenetrating network of a nanostructured high surface area to volume ratio film material and an organic/inorganic material forming a nanocomposite. The high surface area to volume film material is obtained onto an electrode substrate first, such that the nano-scale basic elements comprising this film material are embedded in a void matrix while having electrical connectivity with the electrode substrate. For example, the film material may comprise an array of nano-protrusions electrically connected to the electrode substrate and separated by a void matrix. The interpenetrating network is formed by introducing an appropriate organic/inorganic material into the void volume of the high surface area to volume film material. Further electrode(s) are defined onto the film or intra-void material to achieve a certain device. Charge separation, charge injection, charge storage, field effect devices, ohmic contacts, and chemical sensors are possible.

Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films

This invention presents a novel method to form uniform or heterogeneous, straight or curved and size-controllable nanostructures including, for example, nanotubes, nanowires, nanoribbons, and nanotapes, including SiNW, using a nanochannel template. In the case of semiconductor nanowires, doping can be included during growth. Electrode contacts are present as needed and may be built in to the template structure. Thus completed devices such as diodes, transistors, solar cells, sensors, and transducers are fabricated, contacted, and arrayed as nanowire or nanotape fabrication is completed. Optionally, the template is not removed and may become part of the structure. Nanodevices such as nanotweezers, nanocantilevers, and nanobridges are formed utilizing the processes of the invention.

Controlled nanowire growth in permanent, integrated nano-templates and methods of fabricating sensor and transducer structures

There is disclosed an apparatus for providing an ionized analyte for mass analysis by photon desorption comprising at least one layer for contacting an analyte, and a substrate on which said layer is deposited. Upon irradiation of said apparatus, said analyte desorbs and ionizes for analysis by mass spectrometry. The layer or layers of said apparatus comprise a continuous film, a discontinuous film or any combinations thereof.

Matrix-free desorption ionization mass spectrometry using tailored morphology layer devices

A novel porous film is disclosed comprising a network of silicon columns in a continuous void which may be fabricated using high density plasma deposition at low temperatures, i.e., less than about 250&deg; C. This silicon film is a two-dimensional nano-sized array of rodlike columns. This void-column morphology can be controlled with deposition conditions and the porosity can be varied up to 90%. The simultaneous use of low temperature deposition and etching in the plasma approach utilized, allows for the unique opportunity of obtaining columnar structure, a continuous void, and polycrystalline column composition at the same time. Unique devices may be fabricated using this porous continuous film by plasma deposition of this film on a glass, metal foil, insulator or plastic substrates.

Deposited thin film void-column network materials

A metal-containing toner is electrostatically printed on a semiconductor surface. Subsequently, this surface is annealed to achieve certain material modifications selectively at the regions where the toner is applied. If the toner contains a crystallization-catalyst metal, such as, Pd, Ni, Pt, and Cr, and is printed on an amorphous semiconductor film, annealing results in conversion of the printed regions to polycrystalline. If the metal-containing toner is printed on a silicon surface (i.e., amorphous/poly-Si layer or Si wafer) the printed regions are selectively converted to a metal-silicide (with the sufficient amount of metal applied on these regions) upon annealing.

Electrostatic printing of a metallic toner applied to solid phase crystallization and silicidation

A catalytic liquid toner is electrostatically printed on an amorphous silicon layer (or a substrate that is to support such a layer), in an image-wise fashion. After the liquid toner is dried, the amorphous silicon layer is heated, preferably using rapid thermal annealing, to approximately 550&deg; C. for about 2 minutes to cause the toned areas to be converted to polysilicon. The toner used during the printing action is a dispersion of resin particles which contain a metallic catalyst, such as palladium, nickel or chromium.

Electrostatic printing of a metallic toner to produce a polycrystalline semiconductor from an amorphous semiconductor

This invention is directed toward methods for fabricating polycrystalline thin films. More particularly, the invention is directed toward optimized solid phase crystallization of plasma enhanced chemical vapor deposited amorphous silicon thin films as a means for obtaining, with a low thermal budget, polycrystalline silicon thin films comprising larger grain sizes and smother surfaces. The process of plasma enhanced chemical vapor deposition is quantified for silane containing various types of dilutants, thereby allowing deposition temperature, type of dilutant, type of plasma and other parameters to be controlled to yield the desired crystallization grain size at the desired thermal budget. Methods of annealing, annealing temperature, and pre-annealment treatments are also quantified such that grain size and thermal budget can be controlled in the fabrication of polycrystalline silicon thin films. Methods and apparatus for the select regional crystallization of an originally amorphous thin film using photon radiation is disclosed, wherein these methods and apparatus yield polycrystalline thin films with maximum grain size at a minimum thermal budget.

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State College, PA, United States of America

Ali Kaan Kalkan