University of California

Leland Stanford Junior University

Serinus Labs, Inc.

Rohm and Haas Electronics Materials LLC

Ali Javey

Hossain Mohammad Fahad

Kuniharu Takei

Rehan Rashid Kapadia

Niharika Gupta

Thomas Schenkel

Arun Persaud

Peter Trefonas, Iii

Hongjie Dai

Constance J Chang-Hasnain

Yu-Lun Chueh

Ivo Rangelow

Arash Hazeghi

Rachel A Segalman

H S Philip Wong

Joe Kwan

Daisuke Kiriya

Yang Chai

Zhen Yuan

Rui Han

James Bullock

Gordon Charles

Hiroshi Shiraki

Toshitake Takahashi

Kevin Chen

Megan L Hoarfrost

Alexandra C Ford

Johnny C Ho

Zhiyong Fan

Hyunhyub Ko

Matin Amani

Der-Hsien Lien

Mallika Bariya

A multi-gas sensor to detect food spoilage and a method of forming the same are disclosed. The multi-gas sensor includes a silicon substrate and a plurality of chemical sensitive field effect transistor (CSFET) sensors formed on a surface of the silicon substrate, wherein each one of the plurality of CSFET sensors are decorated with a different material to detect a different gas associated with food spoilage.

Multi-gas detection with CS-FET arrays for food quality assessment

A rechargeable energy storage system includes battery cell(s) and a battery management system (BMS) for detecting cell damage prior to the cell(s) entering an irreversible thermal runaway. The BMS includes gas sensor array(s) for detecting gas(es) vented by the cell(s). Each sensor detects a trace amount of one vented gas indicative of cell damage insufficient to trigger an irreversible thermal runaway. The BMS also includes a controller receiving from the sensor array(s) data indicative of the detected gas trace amounts. The controller compares the detected trace amount with a threshold margin relative to an amount indicative of cell damage that triggers irreversible thermal runaway. The controller additionally identifies damaged cell(s) when the detected trace amount is within the threshold margin. The controller further commands a corrective action to mitigate further damage to the damaged cell(s) and reduce a likelihood of the subject cell(s) entering the irreversible thermal runaway.

Battery cell thermal failure mitigation

In one example, a gas sensor is provided. The gas sensor includes a substrate, an isolation region formed on outer edges of the substrate, a micro-heater formed on the isolation region, a sensing layer formed on the substrate inside of the isolation region, and a source and drain formed around the sensing layer and inside of the isolation region.

Gas sensors with negligible response to humidity and temperature

A gas sensor and methods for producing the same are disclosed. The gas sensor of the present disclosure includes a bulk silicon layer, comprising a controllable inversion layer, an oxide layer on top of the bulk silicon layer, wherein the controllable inversion layer is located at an interface of the bulk silicon layer and the oxide layer, and a sensing layer on the oxide layer, wherein a sensitivity of the sensing layer is a function the controllable inversion layer.

Inversion layer gas sensors using bulk silicon chemical sensitive transistors

A battery management system configured to detect impending failure of a lithium-ion battery cell includes a sensor array microchip. The microchip includes a plurality of silicon chemical-sensitive field effect transistors (CS-FETs) configured to detect multiple distinct gases vented by the lithium-ion battery cell. The battery management system also includes a cell monitoring unit (CMU) configured to receive from at least one of the CS-FETs data indicative of a detected amount of gas vented by the lithium-ion battery cell. The CMU is also configured to compare the data indicative of the detected amount of the vented gas to a predetermined threshold amount of the subject vented gas programmed into the CMU. The CMU is further configured to trigger a signal indicative of impending failure of the lithium-ion battery cell when the detected amount of the vented gas exceeds the predetermined threshold amount of the subject vented gas.

Lithium-ion battery impending failure detection

A system and method for chemical sensing of multiple gases or vapors with an array of chemical sensitive field effect transistor (CS-FET) devices that are highly sensitive, small in size and have low energy consumption. The sensor layer is an ultrathin film of transition metal oxide, rare earth metal oxide or metal nanoparticles that is formed between the source and drain electrodes on a silicon substrate. The work functions of the sensor layer can be manipulated by the adsorption of chemicals onto their surfaces. These changes cause a change in the surface potential of the underlying Si channel, leading to the current modulation of the devices. By selecting appropriate sensor layers, different chemicals will produce different output signals. External signal processing of these signals enables and sensor and array profile matching permits multi-gas detection.

Chemically sensitive field effect transistor sensors

This disclosure provides systems, methods, and apparatus related to the growth of single crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a semiconductor structure to be formed on an amorphous substrate is defined in a resist disposed on the amorphous substrate. A boron group element is deposited over the amorphous substrate. A ceramic material is deposited on the boron group element. The resist is removed from the amorphous substrate. The ceramic material is deposited to cover the boron group element. The amorphous substrate and materials deposited thereon are heated in the presence of a gas including a nitrogen group element to grow a single crystal semiconductor structure comprising the boron group element and the nitrogen group element.

Growth of single crystal III-V semiconductors on amorphous substrates

Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoSis reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoSmonolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8&#xb1;0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

[object Object]

A method of conductively coupling a carbon nanostructure and a metal electrode is provided that includes disposing a carbon nanostructure on a substrate, depositing a carbon-containing layer on the carbon nanostructure, according to one embodiment, and depositing a metal electrode on the carbon-containing layer. Further provided is a conductively coupled carbon nanostructure device that includes a carbon nanostructure disposed on a substrate, a carbon-containing layer disposed on the carbon nanostructure and a metal electrode disposed on the carbon-containing layer, where a low resistance coupling between the carbon nanostructure and metal elements is provided.

Methods of establishing low-resistance electrical contact to carbon nanostructures with graphitic interfacial layer

This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.

Carbon nanotube network thin-film transistors on flexible/stretchable substrates

A neutron generator includes a conductive substrate comprising a plurality of conductive nanostructures with free-standing tips and a source of an atomic species to introduce the atomic species in proximity to the free-standing tips. A target placed apart from the substrate is voltage biased relative to the substrate to ionize and accelerate the ionized atomic species toward the target. The target includes an element capable of a nuclear fusion reaction with the ionized atomic species to produce a one or more neutrons as a reaction by-product.

Compact ion source neutron generator

Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a dopant-containing polymer and a non-polar solvent on a substrate; and annealing the substrate at a temperature of 750 to 1300&#xb0; C. for 1 second to 24 hours to diffuse the dopant into the substrate; wherein the dopant-containing polymer is a polymer having a covalently bound dopant atom; wherein the dopant-containing polymer is free of nitrogen and silicon; and wherein the method is free of a step of forming an oxide capping layer over the coating prior to the annealing step.

Doping of a substrate via a dopant containing polymer film

An ion source includes a conductive substrate, the substrate including a plurality of conductive nanostructures with free-standing tips formed on the substrate. A conductive catalytic coating is formed on the nanostructures and substrate for dissociation of a molecular species into an atomic species, the molecular species being brought in contact with the catalytic coating. A target electrode placed apart from the substrate, the target electrode being biased relative to the substrate with a first bias voltage to ionize the atomic species in proximity to the free-standing tips and attract the ionized atomic species from the substrate in the direction of the target electrode.

Compact ion accelerator source

Compound semiconductor devices and methods of doping compound semiconductors are provided. Embodiments of the invention provide post-deposition (or post-growth) doping of compound semiconductors, enabling nanoscale compound semiconductor devices including diodes and transistors. In one method, a self-limiting monolayer technique with an annealing step is used to form shallow junctions. By forming a sulfur monolayer on a surface of an InAs substrate and performing a thermal annealing to drive the sulfur into the InAs substrate, n-type doping for InAs-based devices can be achieved. The monolayer can be formed by surface chemistry reactions or a gas phase deposition of the dopant. In another method, a gas-phase technique with surface diffusion is used to form doped regions. By performing gas-phase surface diffusion of Zn into InAs, p-type doping for InAs-based devices can be achieved. Both bulk and nanowire devices using compound semiconductors can be fabricated using these surface and gas-phase doping processes.

Surface and gas phase doping of III-V semiconductors

Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (&#x2dc;4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (&#x3c;1%) is observed, even for high angles of incidence (&#x2dc;75&#xb0;) and for relatively short nanoneedle lengths (&#x2dc;1 &#x3bc;m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of &#x2dc;1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

Growing community of inventors

Emeryville, CA, United States of America

Ali Javey