International Business Machines Corporation

Globalfoundries Inc.

Egypt Nanotechnology Center

Advanced Technology Materials, Inc.

Egypt Nanotechnology Center (egnc)

Egypt Nanotechnologies Center

Ali Afzali-Ardakani

George Stojan Tulevski

Bahman Hekmatshoartabari

Devendra K Sadana

Cherie Renee Kagan

James Bowler Hannon

Tze-Chiang Chen

Gustavo Alejandro Stolovitzky

Shu-Jen Han

Hongbo Peng

Binquan Luan

Davood Shahrjerdi

Damon B Farmer

Glenn John Martyna

Bharat Kumar

Joel Pereira De Souza

Kailash Gopalakrishnan

Stefan Harrer

Stephen Mark Rossnagel

Mahmoud M Khojasteh

Keith S Pennington

Lidija Sekaric

John C Collins

Abram L Falk

Teodor Krassimirov Todorov

Sufi Zafar

Christos Dimitrios Dimitrakopoulos

Phaedon Avouris

Rudolf M Tromp

Deqiang Wang

Laura Louise Kosbar

Pouya Hashemi

Hendrik F Hamann

Robert J Von Gutfeld

Stanislav Polonsky

Daniel Michael Kuchta

Hsinyu Tsai

Christopher Peter D'Emic

Alexander Reznicek

Stephen W Bedell

Karthik Balakrishnan

Supratik Guha

Krishna Gandhi Sachdev

Aaron Daniel Franklin

Ajay K Royyuru

Ghavam G Shahidi

Tak H Ning

Katherine Lynn Saenger

Paul Andrew Moskowitz

Jeffrey Donald Gelorme

Sarunya Bangsaruntip

Matthew Warren Copel

Christopher Bruce Murray

Praveen Chaudhari

Maryam Ashoori

Mitchell S Cohen

Young Hoon Kwark

Ali Khakifirooz

Alejandro Gabriel Schrott

Marie Angelopoulos

Yu Zhu

Oki Gunawan

Frank Robert Libsch

Jane M Shaw

Mark N Wegman

Richard Alan Haight

Dennis Merton Newns

David Lee Rath

Emanuel Israel Cooper

Charles Philippe Tresser

Claudius Feger

Martin O Sandberg

Vivekananda P Adiga

Kang-Wook Lee

Robert L Sandstrom

Yu-Ming Lin

Jia Chen

Chao Wang

Sally Ann Swanson

Hariklia Deligianni

Paul Michael Solomon

Qinghuang Lin

John Anthony Fitzsimmons

Talia S Gershon

Daniel Sanders

George Frederick Walker

Dario Leonardo Goldfarb

Jeffrey Curtis Hedrick

David Robert Medeiros

David Brian Mitzi

Ravi F Saraf

Nicholas C M Fuller

Liam David Comerford

James Andrew Lacey

Xiaoyan Shao

Niranjan Mohanlal Patel

Hanhee Paik

Ahmad D Katnani

David Earle Seeger

Fengnian Xia

Making a rechargeable Lithium energy storage device begins by forming one or more trenches in a solid silicon substrate. One or more region interface precursors are deposited in the trench followed by one or more anode materials, one or more solid polymer electrolytes (SPE), and one or more cathode materials. Electrically cycling transforms the battery structures prior to full operation of the battery. Some, or all, of the process steps can be performed while the materials are within the trench, i.e. in-situ.

Method of making a lithium energy storage device

Devices, methods, and/or computer-implemented methods that can facilitate formation of a self assembled monolayer on a quantum device are provided. According to an embodiment, a device can comprise a qubit formed on a substrate. The device can further comprise a self assembled monolayer formed on the qubit.

Self assembled monolayer formed on a quantum device

Techniques regarding methods and/or apparatuses for protecting metal substrates during one or more lithography processes are provided. For example, one or more embodiments described herein can comprise a method that can include coating a metal substrate with a polymer film that self-assembles on a metal oxide positioned on a surface of the metal substrate. The method can also include covalently bonding the polymer film to the metal oxide.

Metal surface protection

Programmable memory devices having a cross-point array of polymer junctions with individually-programmed conductances are provided. In one aspect, a method of forming a memory device includes: forming first metal lines on an insulating substrate; forming polymeric resistance elements on the first metal lines; and forming second metal lines over the polymeric resistance elements with a single one of the polymeric resistance elements present at each intersection of the first/second metal lines forming a cross-point array. A memory device and a method of operating a memory device are also provided.

Cross-point array of polymer junctions with individually-programmed conductances

A silicon-based electrode forms an interface with a layer pair being: 1. a thin, semi-dielectric layer made of a lithium (Li) compound, e.g. lithium fluoride, LiF, disposed on and adheres to the electrode surface of the silicon-based electrode and 2. an molten-ion conductive layer of a lithium containing salt (lithium salt layer) disposed on the semi-dielectric layer. One or more device layers can be disposed on the layer pair to make devices such as energy storage devices, like batteries. The interface has a low resistivity that reduces the energy losses and generated heat of the devices.

Low resistance composite silicon-based electrode

An interconnect for a semiconductor device includes: a carrier; a UV programmable chip mounted on the carrier using a first array of solder connections; a UV light source mounted on the carrier using a second array of solder connections, the UV light source being in optical communication with the UV programmable chip; and a plurality of transmission lines extending on or through the carrier and providing electrical communication between the UV programmable chip and the UV light source.

Dense hybrid package integration of optically programmable chip

An energy storage device is provided that includes a pre-lithiated silicon based anode and a carbon nanotube based cathode. The pre-lithiated silicon anode has a porous region and a non-porous region. The full cell energy storage device has high electrochemical performance which exhibits greater 200 rechargeable cycles with less than 25% after 10 charge discharge cycles relative to the first discharge cycle, a maximum specific discharge capacity greater than 300 mAh/g and a specific capacity of greater than 100 mAh/g for over 130 cycles. Such an energy storage device is scalable for a wide array of applications due to its wafer level processing and silicon-based substrate integrability.

Energy storage device containing a pre-lithiated silicon based anode and a carbon nanotube based cathode

An apparatus includes a wearable sensor structure that includes multiple individual sensor units placed in a row. Each individual sensor unit includes a first portion to contact a surface of skin under which arteries and/or veins are to be located, and a second portion that contacts the first portion and is configured to have a capacitance. The first and second portions are configured to create a capacitance change in response to a squeezing or bending between the first portion and a fixed part of the second portion caused by a pulse pressure and release of the pulse pressure. The apparatus includes circuitry configured to measure waveforms for the individual sensor units. Each waveform captures the capacitance change for its corresponding individual sensor unit. The apparatus includes a wireless interface configured to transmit the waveforms. A computing system is also disclosed that analyzes the waveforms and can provide alerts based thereon.

Layered and multi-sectional pulse wave sensors and use thereof

A catholyte-like material including a cathode material and an interfacial additive layer for providing a lithium ion energy storage device having low impedance is disclosed. The interfacial additive layer, which is composed of vapor deposited iodine, is present between the cathode material and an electrolyte layer of the device. The presence of such an interfacial additive layer increases the ion and electron mobile dependent performances at the cathode material interface due to significant decrease in the resistance/impedance that is observed at the respective interface as well as the impedance observed in the bulk of the device. The catholyte-like material of the present application can be used to provide a lithium ion energy storage device having high charge/discharge rates and/or high capacity.

Lithium ion energy storage device containing a vapor deposited iodine interfacial layer

An interfacial additive layer for decreasing the interfacial resistance/impedance of a silicon based electrode-containing device such as, for example, an energy storage device or a micro-resistor, is disclosed. The interfacial additive layer, which is composed of a molten lithium containing salt, is formed between a silicon based electrode and a solid polymer electrolyte layer of the device. The presence of such an interfacial additive layer increases the ion and electron mobile dependent performances at the silicon based electrode interface due to significant decrease in the resistance/impedance that is observed at the respective interface as well as the impedance observed in the bulk of the device.

Molten ion conductive salt/silicon interface for decreased interfacial resistance

Systems, methods, and electronic circuits facilitating embedded sensor chips in polymer-based coatings are provided. In one example, a method comprises fabricating an electronic circuit, the electronic circuit comprising one or more semiconductor devices, one or more sensors, and a communication element; encapsulating the electronic circuit within an insulator, resulting in an encapsulated circuit; and dispersing the encapsulated circuit into a lacquer solution comprising a polymer carrier and a solvent.

Embedded sensor chips in polymer-based coatings

A Lithium energy storage device comprising a cathode, electrolyte, anode, and substrate. The materials contained in the anode and electrolyte region are electrochemically altered during initial formation and exposed to current cycles to create a lower impedance composite anode. The resulting composite anode bottom is a bi-layer comprising: i. a lithium metal layer and ii. a silicon-based interphase layer. The bi-layer acts as a barrier to inhibit Lithium ions from entering or leaving a Lithium saturated substrate, once the interphase surface is formed and the substrate is saturated with Lithium ions. This prevents cell failure from large volume changes/stresses during charge/discharge cycles and enables a significant decrease in cell impedance to enable better rechargeable cell performance.

Lithium energy storage device with composite anode

A resistive element in an artificial neural network, the resistive element includes a Silicon-on-insulator (SOI) substrate, and a Silicon layer formed on the Silicon-on-insulator substrate. The Silicon layer includes dopants derived from a thin film dopant layer, and the thin film dopant layer includes a programmed amount of dopant including at least one of Boron and Phosphorus.

Artificial neural networks (ANN) including a resistive element based on doped semiconductor elements

A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bifunctional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

Formation of carbon nanotube-containing devices

A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

Growing community of inventors

Ossining, NY, United States of America

Ali Afzali-Ardakani