Instituto Mexicano Del Petroleo

Alfredo Vargas Escudero

Salvador Castillo Cervantes

Isidro Mejia Centeno

Roberto Camposeco Solis

Florencia Marina Moran Pineda

Juan Navarrete Bolanos

J Ascension Montoya De La Fuente

A semiconductor material basically consists of titanium oxide, with the special feature of being like nanostructures, which gives special physicochemical properties, with ability to disperse and stabilize metal particles with high activity and selectivity in catalytic processes mainly. The process of producing the semiconductor material includes adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, controlling the pH from 1 to 5; subjecting the acidic solution to agitation and reflux conditions at 70 to 80&#xb0; C.; stabilizing the medium and adding bidistilled water in a water/alkoxide molar ratio of 1-2/0.100-0.150, continuing with reflux until gelation; aging the gel for 1 to 24 hours for complete formation of the titania; drying the titania nanostructured at of 50 to 80&#xb0; C. for about 1 to 24 hours, and subjecting the dried titania to a calcination step at 200 to 600&#xb0; C. for 1 to 12 hours.

Nanostructured titania semiconductor material and its production process

A nanostructured titania semiconductor material termed TSG-IMP having a predetermined crystal size is produced by a sol-gel method by adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, subjecting the acidic solution to agitation under reflux conditions; stabilizing the medium and adding bidistilled water under reflux until gelation; subjecting the gel to aging until complete formation of the titania which is dried and calcined.

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Alfredo Vargas Escudero