Consejo Superior De Investigaciones Cientificas

Alfredo Cadarso Busto

César Fernández Sánchez

Andreu Llobera Adan

Carlos Dominguez Horna

Ángel Merlos Domingo

Ferrán Vera Gras

Isabel Burdallo Bautista

Antoni Baldi Coll

Cecilia Jimenéz Jorquera

Cecilia Jimenèz Jorquera

Antonio Baldi Coll

Carlos DOMÍNGUEZ Horna

ÁNgel Merlos Domingo

César FERNÁNDEZ SÁNCHEZ

Cecilia JIMÉNEZ Jorquera

Ion sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution.

Ion sensor based on differential measurement, and production method

The present invention concerns an ion sensor based on differential measurement, that by means of at least two ion-sensitive field-effect transistors, compares the concentration of certain ions in a solution to be measured with the concentration of certain ions in a reference solution contained in a micro-reservoir with a micro-channel. To do this, the micro-reservoir and the micro-channel cover at least the gate of one of the ion-sensitive field-effect transistors and make up a unit partially filled with a porous material that covers the entirety of the aforementioned gate and at least the base of the micro-channel.

Ion sensor with differential measurement

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Barcelona, Spain

Alfredo Cadarso Busto