Binoptics Corporation

Cornell Research Foundation Inc.

Macom Technology Solutions Holdings, Inc.

Alfred T Schremer, Jr

Alex A Behfar

Cristian Stagarescu

Malcolm R Green

Vainateya

Kiyofumi Muro

Chung L Tang

Yukihiro Ozeki

Wei-Hung Loh

Cristian B Stagarescu

Nln Vainateya

Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

High SMSR unidirectional etched lasers and low back-reflection photonic device

Unidirectionality of lasers is enhanced by forming one or more etched gaps () in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg () of a V-shaped laser (). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs etching to form device waveguides and mirrors, preferably using a temperature of over 500&#xb0; C. and an ion beam in excess of 500 V in CAIBE.

Algainn-based lasers produced using etched facet technology

A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.

Multi-level integrated photonic devices

A process for fabricating AlGaInN-based photonic devices, such as lasers, capable of emitting blue light employs dry etching to form device waveguides and mirrors. The dry etching is preferably performed using a Chemically Assisted Ion Beam Etching (CAIBE) system.

AlGaInN-based lasers produced using etched facet technology

An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam.

Spatial filters

A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.

Single longitudinal mode laser diode

A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500&#xb0; C. and an ion beam in excess of 500 V in CAIBE.

A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.

Etched-facet ridge lasers with etch-stop

A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.

Monitoring photodetector for integrated photonic devices

A laser () and detector () integrated on corresponding epitaxial layers of a single chip () cooperate with on-chip and/or external optics () to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber () and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.

Growing community of inventors

Freeville, NY, United States of America

Alfred T Schremer, Jr