Siemens Aktiengesellschaft

Alfred Schuetz

Ewald Soutschek

Hans-Joerg Pfleiderer

Wolfgang Peter Mueller

Wolfgang Muller

An integrated circuit for a dynamic semiconductor random access memory, constructed of complementary transistors, has memory cells connected to bit lines by way of individual selection transistors of a first channel type, the operation of which is controlled by word lines. The voltage on the word lines is controlled by a first switching transistor of a second channel type, controlled by the output of a decoder. The first switching transistor is connected between the word line and a selection voltage which alternates between two voltage values of different operational signs, and the gate of the first switching transistor is connected through a capacitor to the selection voltage and through a second switching transistor having its gate at reference potential, to the output of the decoder.

Integrated dynamic semiconductor memory with complementary circuitry and

An integrated circuit in complementary circuit technology comprising two field effect transistors (T1, T2) of different channel types with the first one (T2) mounted in a doped semiconductor body (1) having a first conductivity type and the other FET (T1) mounted in a semiconductor zone 2 of a second conductivity type which is arranged in said body. The object is to provide a protection against thermal overloads which can appear due to 'latch up' influences when overvoltages at the one connecting region of the field effect transistor (T1) mounted in the semiconductor zone occur. This is accomplished by the mounting of a metal contact (12) on the surface of a semiconductor region (2') inserted into the semiconductor body 1 and doped oppositely thereto with such metal contact forming a Schottky diode (D) with the semiconductor region (2') which can be connected to the connecting region of the field effect transistor T1 mounted in the semiconductor region 2 whereas the semiconductor region (2') is electrically connected to the supply voltage (V.sub.DD). The circuits are applied in CMOS circuits.

Integrated circuit in complementary circuit technology

An integrated circuit for emitting a clock voltage V.sub.A which alternates between positive and negative voltage levels with the clock voltage being controllable by means of a unipolar clock voltage V.sub.E and wherein the circuit is a very simple small semiconductor arrangement which has three series connected field effect transistors T1, T2 and T3 with the first end of the series arrangement receiving a first reference voltage and the other end of the series arrangement receiving a second reference voltage. The first and second field effect transistors 1 and 2 or first and second channel types and have gate terminals which are commonly connected to the control input V.sub.E and the junction point 3 of the first two field effect transistors T1 and T2 connected to the output terminal and also connected by way of a capacitor to the gate of the third field effect transistor T3 which is of the first channel type. The gate of the third field effect transistor T3 is connected by way of a diode D or an additional field effect transistor T4 of the first channel type which has its gate connected to the second reference voltage potential.

Growing community of inventors

Zorneding, Germany

Alfred Schuetz