Siemens Aktiengesellschaft

Infineon Technologies Ag

Alfred Porst

Anton Mauder

Heinrich Brunner

Gerhard Miller

Jenoe Tihanyi

Thomas Laska

Hans-Joachim Schulze

Helmut Strack

Reiner Barthelmess

Torsten Franke

Josef-Matthias Gantioler

Josef Georg Bauer

Mario Feldvoss

Franz Auerbach

Gottfried Schuh

Friedrich Dannhauser

Hans Stut, Deceased

Peter Turkes

A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1&#xd7;10to 3&#xd7;10dopant atoms per cmfor the anode emitter, especially on its surface 10dopant atoms per cmor more for the cathode emitter and approximately 10dopant atoms per cmfor the blocking function of an anode-side zone.

High-voltage diode

A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.

Power semiconductor component for high reverse voltages

A method for forming a field effect vertical bipolar transistor that includes a semiconductive body that has at its top surface a plurality of emitter zones of one conductivity type, each surrounded by a base zone of the opposite conductivity type, and gate electrodes for creating a channel at the surface through the base zone into the bulk inner portion of the one conduction type and at a bottom surface a collector zone that includes a collector electrode overlying a collector layer of the opposite conduction type overlying a field stop layer heavily doped of the opposite conduction type overlying the inner portion lightly doped of the one conduction type. Each of the collector layer and the field stop layer is less than 2 microns in thickness and the collector layer is used to inject minority carriers into the inner zone when appropriately biased.

Bipolar transistor which can be controlled by field effect and method for producing the same

Semiconductor component with a control electrode for modulating the

A semiconductor body is covered by a polysilicon layer having a gate electrode and a contact surface for fastening a gate lead. An integrated ohmic resistor connects the gate electrode to the contact surface.

Field effect controlled semiconductor component with integrated

MOSFET and IGBT components protected against overvoltage by a limiting diode inserted between drain or, respectively, collector terminal and gate terminal are provided. A freewheeling diode connected to the component having a limiting diode with a breakdown voltage that is lower than the breakdown voltage of the freewheeling diode by a defined amount is provided. This over-voltage protection can be achieved in a simple way by integrating the limiting diode into the semiconductor body of the freewheeling diode and by a corresponding arrangement of the anode zone of the limiting diode.

Semiconductor component arrangement for overvoltage protection of

Inverter circuits are provided with bridge arms which, for example, including series-connected transistors (T1l , T2l ) with one freewheeling diode (D1, D2) each transistor. A critical operating state occurs when the recovery current is switched off by one of the diodes (D1, D2), so that the other transistor (T1l , T2l ) is cut in. The return current, which passes through this diode, can assume such high values, when rapidly cutting in the transistor, that the 'dynamic' blocking capability of the diode is exceeded, and the diode is burnt out. The load current and the control current are thus reversed, so that the transistor is switched on more slowly and temporarily takes over part of the voltage which is normally applied to the diode.

Bridge arm with transistors and recovery diodes

The present invention concerns a power diode with a semiconductor body having an inner zone with a given thickness and a given specific resistance, and having on each side of said inner zone at least one outer zone which adjoins the inner zone and has a lower specific resistance in comparison with the inner zone. The diode is characterized in that the specific resistance and the thickness of the inner zone are so adapted to each other that U.sub.B &lt; U.sub..rho.T, wherein U.sub.B is the avalanche voltage, and U.sub..rho.T is the voltage at which the space-charge zone includes the entire relatively lightly doped inner zone.

Power diode

A thyristor having current-amplifying auxiliary structures with an auxiliary emitter electrode out of contact with the contact electrode. The auxiliary emitter electrode is formed thinner than the main emitter electrode. The contact electrode is formed by simple planar techniques to have a plane surface on top of the semiconductor body.

Growing community of inventors

Munich, Germany

Alfred Porst