Siltronic Ag

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Alfred Miller

Reinhold Wahlich

Georg Raming

Markus Blietz

Dirk Zemke

Martin Weber

Andreas Sattler

Walter Heuwieser

Robert Vorbuchner

Erich Gmeilbauer

Andreas Muehe

Dieter Graef

Matthias Daniel

Dieter Gräf

Jochen Friedrich

Johann-Andreas Huber

Ludwig Stockmeier

Single crystal silicon with &#x3c;100&#x3e; orientation is doped with n-type dopant and comprises a starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20&#xb0; and not greater than 30&#xb0; in a middle portion of the starting cone, the length of which is not less than 50% of a length of the starting cone, and edge facets extending from a periphery of the single crystal into the single crystal, the edge facets in the starting cone and in the cylindrical portion of the single crystal in each case having a length which is not more than 700 &#x3bc;m.

Single crystal of silicon with &#x3c;100&#x3e; orientation, which is doped with n-type dopant, and method for producing such a single crystal

A device for pulling a single crystal from a melt having a widened portion between an upper and a lower neck portion including a pulling device having a pulling device cable drum configured to wind a pulling cable, the pulling cable configured to pull the single crystal and a supporting device configured to relieve the upper neck portion of a weight of the single crystal.

Device for pulling a single crystal

Silicon semiconductor wafers are produced by:

Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm

An SOI wafer is constructed from a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, an excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. The SOI wafers may be prepared by Czochralski silicon single crystal growth, the condition v/G&#x3c;(v/G)=1.3&#xd7;10cm/(K&#xb7;min) being fulfilled at the crystallization front over the entire crystal cross section, with the result that an excess of interstitial silicon atoms prevails in the silicon single crystal produced; separation of at least one donor wafer from this silicon single crystal, bonding of the donor wafer to a carrier wafer, and reduction of the thickness of the donor wafer, with the result that a silicon layer having a thickness of less than 500 nm bonded to the carrier wafer remains.

SOI wafer and method for producing it

A single-crystal rod, obtained using CZ crucible pulling, has a crystal cone and a cylindrical single-crystal rod, and the crystal cone has an apex angle of 30&deg; to 90&deg;. There is also a process for producing dislocation-free single-crystal rods using CZ crucible pulling in which a seed crystal is immersed in a melt and is pulled out again, and a cone with an apex angle of from 30&deg; to 90&deg; is pulled.

Single-crystal rod and process for its production

Growing community of inventors

Emmerting, Germany

Alfred Miller