Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Siemens Aktiengesellschaft

Infineon Technologies Ag

Osram Gmbh

Alfred Lell

Christoph Eichler

Bernhard Stojetz

Sven Gerhard

Clemens Vierheilig

Uwe Strauss

Soenke Tautz

Andreas Löffler

Andreas Loeffler

Muhammad Ali

Wolfgang Schmid

Wolfgang Reill

Berthold Hahn

Volker Härle

Adrian Stefan Avramescu

Stefan Bader

Frank Singer

Herbert Brunner

Dominik Eisert

Martin Rudolf Behringer

Harald König

Dimitri Dini

Volker Harle

Karsten Auen

Uwe Strauβ

Harald Koenig

Jens Mueller

Hubert Ott

Sönke Tautz

Andre Somers

Jörg Erich Sorg

Martin Strassburg

Ulrich Zehnder

Norbert Stath

Roland Schulz

Florian Peskoller

Georg Brüderl

Marc Schillgalies

Roland Hüttinger

Andreas Breidenassel

André Somers

Helmut Bolay

Andreas Miler

Thomas Adlhoch

Tilman Schlenker

Michael Fehrer

Andreas Weimar

Jens Ebbecke

Sebastian Taeger

Christian Rumbolz

Martin Müller

Martin Straβburg

Johannes Volkl

Jelena Ristic

John Brückner

Hans-Jurgen Lugauer

Christine Höss

Andreas Weimer

Matthias Peter

Werner Bergbauer

Hans-Jürgen Lugauer

Fabian Kopp

Jürgen Off

Martin Mandl

Johann Luft

Helmut Fischer

Kirstin Petersen

Stefanie Rammelsberger

Volker Haerle

Ferdinand Scholz

Sophia Huppmann

Thomas Veit

Andreas Leber

Frank Baumann

Johannes Völkl

Jens Müller

Christoph Walter

Stefan Hartauer

Heinz Clemens Schweizer

Thomas Hager

Stefanie Brüninghoff

Christoph Nelz

Joachim Pfeiffer

Viorel Dumitru

Bertram Kuhn

Jan Wagner

Uwe Strauß

Christine Höß

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Semiconductor laser and method of production for optoelectronic semiconductor parts

An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductive type, an active region configured to generate electromagnetic radiation, a second region of a second conductive type and a coupling-out surface configured to couple-out the electromagnetic radiation, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, and wherein the coupling-out surface is arranged plane-parallel to the rear surface.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

Semiconductor laser diode

The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current Ifed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop Uoccurs at the section and at least part of said operating current Iflows through the assigned current regulating element and experiences an electrical resistance Rin the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature Thas a positive temperature coefficient dR/dT|. Alternatively or additionally, the resistance Ris greater than |ΔU/I, wherein ΔUis the change in the voltage drop Uat the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature Tby 1 K.

Diode laser and method for operating a diode laser

In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlInGaN with 0≤x≤1, 0≤y<1 and x+y≤1, wherein at least one layer of the layer system includes an aluminum portion x≤0.05 or an indium portion y≥0.02, wherein a layer strain is at least 2 GPa at least in some areas, and wherein the semiconductor layer sequence is based on a nitride compound semiconductor material.

Edge-emitting semiconductor laser

In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.

Semiconductor laser and production method for a semiconductor laser

In one embodiment, the semiconductor laser () comprises a semiconductor layer sequence () based on the material system AlInGaN with at least one active zone () for generating laser radiation. A heat sink () is thermally connected to the semiconductor layer sequence () and has a thermal resistance towards the semiconductor layer sequence (). The semiconductor layer sequence () is divided into a plurality of emitter strips () and each emitter strip () has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips () are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

Semiconductor laser, operating method for a semiconductor laser, and method for determining the optimum fill factor of a semiconductor laser

A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

Method of producing a semiconductor laser and semiconductor laser

An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

Edge-emitting laser bar

An optoelectronic semiconductor component is provided that includes a primary light source and a secondary light source. The primary light source and the secondary light source are monolithically integrated in the semiconductor component so that only condensed matter is located between them. The primary light source includes a first resonator containing a semiconductor layer sequence which is electrically pumped during operation. A first resonator axis of the first resonator is oriented parallel to a growth direction (G) of the semiconductor layer sequence. The primary light source is configured to generate pump laser radiation (P). The secondary light source includes a pump medium for generating secondary radiation (S) and the pump medium is optically pumped by the pump laser radiation (P). The first resonator axis points past the pump medium.

Optoelectronic semiconductor component

A semiconductor laser () is provided that includes a semiconductor layer sequence in which an active zone for generating laser radiation is located. A ridge waveguide is formed as an elevation from the semiconductor layer sequence. An electrical contact layer is located directly on the ridge waveguide. A metallic electrical connection region is located directly on the contact layer and is configured for external electrical connection of the semiconductor laser. A metallic breakage coating extends directly to facets of the semiconductor layer sequence and is arranged on the ridge waveguide. The breakage coating is electrically functionless and includes comprises a lower speed of sound for a breaking wave than the semiconductor layer sequence in the region of the ridge waveguide.

Semiconductor laser and manufacturing method for a semiconductor laser

An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

Optoelectronic component

In one embodiment the semiconductor laser () comprises a carrier () and an edge-emitting laser diode () which is mounted on the carrier () and which comprises an active zone () for generating a laser radiation (L) and a facet () with a radiation exit region (). The semiconductor laser () further comprises a protective cover (), preferably a lens for collimation of the laser radiation (L). The protective cover () is fastened to the facet () and to a side surface () of the carrier () by means of an adhesive (). A mean distance between a light entrance side () of the protective cover () and the facet () is at most 60 &#x3bc;m. The semiconductor laser () is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

A laser diode chip has a laser facet, which includes a coating. The coating includes an inorganic layer and an organic layer. In one example, the coating has a number of inorganic layers, including a heat-conductive layer. For example, the inorganic layers may form a reflection-increasing or reflection-decreasing layer sequence.

Laser diode chip having coated laser facet

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Maxhütte-Haidhof, Germany

Alfred Lell