Infineon Technologies Ag

Alfred Kersch

Martin Gutsche

Siegfried Schwarzl

Georg Schulze-Icking

Wolfgang Raberg

Hermann Wendt

Harald Seidl

Johannes Baumgartl

Martin Popp

Bernd Goebel

Alexander Ruf

Stefan Miethaner

Dirk Schumann

Jörn Lützen

Ralf Zedlitz

Werner Steinhögl

Stephanie Delage

Bernd G&ouml;bel

Thomas Witke

Werner Steinh&ouml;gl

Ralf-Peter Brinkmann

Winfried Sabisch

An annular microstructure element, in particular an annularly arranged monolayer or multilayer thin film, is formed over a substrate (S), e.g., for use in a magnetoresistive memory. To that end, a masking layer is applied over the substrate. An opening (C) is etched into the masking layer, so that a partial region of the surface is uncovered. The etching operation is performed in such a way that the opening (C) is formed with an overhang (B). The overhang at least partially shades the uncovered surface from an incident particle beam (TS). A particle beam (TS) is directed at the substrate (S) at an oblique angle (&#x3b1;) of incidence. In this case, the substrate (S) is rotated relative to the directed particle beam (TS). From the particle beam, material is thereby deposited annularly on the uncovered surface for the purpose of forming a hole-like microstructure element (R).

Method for producing an annular microstructure element

A PVD method and a PVD apparatus use a rotating magnetic field in order to increase the yield. The magnetic field is provided such that it essentially vanishes, at least in a time average, outside a rotation axis of the magnetic field in sectors of the target region of the PVD apparatus. In this manner the PVD method and the PVD apparatus achieve a uniform coating.

PVD method and PVD apparatus

In order to fabricate a semiconductor memory, a trench capacitor is arranged in a first trench. Beside the first trench, a first longitudinal trench and, parallel on the other side of the first trench, a second longitudinal trench are arranged in the substrate. A first spacer word line is arranged in the first longitudinal trench and a second spacer word line is arranged in the second longitudinal trench. There are arranged in the first trench connecting webs between the first spacer word line and the second spacer word line which have a thickness which, in the direction of the first spacer word line, is less than half the width of the first trench in the direction of the first spacer word line.

Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating it

A reaction chamber for processing a substrate wafer is described. The reaction chamber has a wafer holder for receiving the substrate wafer, a convection plate, which is disposed above the wafer holder, for suppressing convective movements over the substrate wafer, and a gas distributor plate which is disposed on a side face of the reaction chamber, for distributing process or purge gases that flow in. A flow plate is disposed on the gas distributor plate and extends substantially in a plane that is perpendicular to the gas distributor plate. This allows rapid and efficient purging of the reaction chamber.

Reaction chamber for processing a substrate wafer, and method for processing a substrate using the chamber

A chemical mechanical polishing process rotates a wafer having an alignment mark at a wafer rotation rate and a polishing surface at an off-matched rotation rate. The wafer rotation rate and the off-matched rotation rate are not equal. The wafer rotating at the wafer rotation rate and the polishing surface rotating at the off-matched rotation rate touch to polish a plurality of points on the wafer. The rotation of the wafer rotating at the wafer rotation rate is adjusted with respect to the polishing surface rotating at the off-matched rotation rate to achieve an approximately zero averaged rotation rate velocity for each of the points on the wafer with respect to the polishing surface polishing the wafer upon a completion of the total polishing time.

Process for chemical mechanical polishing

A method for determining relevant deposition parameters in i-PVD processes, includes, first calculating the reaction rates for desired reagents of the gas plasma and of a metal and/or metal compound to be deposited, then simulating the edge coverage of a predetermined structure with the deposited metal based upon the calculated reaction rates with systematic variation of the relevant deposition parameters, and compiling variant tables therefrom. By comparing an experimental verification of the simulated edge coverage by imaging the edge coverage of the metal layer deposited over the determined structure, e.g., using a TEM cross-section, with the simulated deposition parameters for the edge coverages that have been recorded in the variant table, it is possible to read the deposition parameters that are of relevance to the process from the variant table.

Method for determining the relevant ion and particle flows in i-PVD processes

Buried straps are produced on one side in deep trench structures. A PVD process is used to deposit masking material in the recess inclined at an angle. As a result, a masking wedge is produced on the buried strap, on one side in the base region of the recess. The masking wedge serves as a mask during a subsequent anisotropic etching step, which is carried out selectively with respect to the masking wedge, for removing the buried strap on one side.

Method and installation for fabricating one-sided buried straps

The present invention relates to a system for executing a plasma-based sputtering method, such as for example a PVD (Physical Vapor Deposition) method. In a process chamber ( ), a plasma ( ) is produced in order to accelerate ionized particles, carried away from a sputter target ( ), through the plasma ( ) towards a substrate ( ), using an electrical field. In the process chamber ( ), between the plasma ( ) and the substrate ( ) a magnetic field component ( ) is produced by that is situated parallel to a substrate surface ( ). Through the magnetic field component ( ), the angular distribution of the ionized particles is deflected from its flight path perpendicular to the substrate surface, so that impact angles are produced that have a greater angular scattering.

Configuration for the execution of a plasma based sputter process

The invention relates to a method for fabricating in particular a TMR element for use in a MRAM, wherein a mask is arranged on a substrate and structured in such a manner that it shadows but does not cover a surface region of the substrate, and wherein material of the structure which is to be fabricated is then deposited on the substrate in a directed deposition process. The invention also relates to a component with a micro-technical structure which has been fabricated in this manner.

Method of fabricating a micro-technical structure, and micro-technical component

The invention relates to a method for fabricating a microtechnical structure ( ) having a depression ( ), which has a high aspect ratio. In order to achieve a good filling behavior, it is proposed to increase the quantity of the passivating particles which are present in the reactor and passivate the surface of the structure ( ) against further addition of the filling material ( ). With suitable process control, the additional passivation has an effect essentially only on the side walls ( ) of the depression ( ).

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Putzbrunn, Germany

Alfred Kersch