U.S. Philips Corporation

Alfred J Van Roosmalen

Anton P Van Arendonk

Klaastinus Hendrikus Sanders

Johan B Kuperus

Jan H Kuntzel

Jozeph P K Hoefsmit

In the known method, a semiconductor element ( ) is provided with two connecting conductors ( ) by arranging, preferably a large number of elements ( ) between first and a second conductive plate ( ), the two connecting conductors ( ) secured at the upper surface and lower surface of an element ( ) being formed from the two plates ( ). The first connecting conductor ( ) is formed from a part ( ) of the first plate ( ) which borders on an opening ( ), and the element ( ) is covered with a protective envelope ( ). The known method has the drawback that the devices obtained are not always directly suitable for surface mounting. Furthermore, the reliability of the device is sub-optimal. In a method in accordance with the invention, the second connecting conductor ( ) of the element ( ) is formed by electroconductively securing a part ( B) of the second plate ( ) to a further part ( A) of the first plate ( ), which further part borders on the opening ( ), is situated opposite the part ( ) of the first plate ( ), and from said further part the second connecting conductor ( ) is made. In this relatively simple manner, namely without the necessity of bending the two connecting conductors ( ) after the provision of the protective envelope ( ), a device is obtained which can suitably be used for surface mounting. In addition, for several reasons the reliability of the device obtained is improved, so that the method can very suitably be used for so-called medium or high-power elements ( ).

Method of manufacturing a semiconductor device

For contacting a non-linear switching element (10), for example for use in a display device (1), a metallic layer (14) is provided on a layer of non-linear resistive material by means of a low-energetic deposition technique. This layer may function as a contact but also as a protective layer when a contact metallization (15) is provided at a later stage.

Non-linear switching element of an electro-optical display device with

A method of manufacturing a semiconductor device, in which a double layer consisting of a layer of polycrystalline silicon and a top layer of a silicide is applied to a surface of a semiconductor substrate coated with a layer of silicon oxide. After an etching mask has been provided, the double layer is etched in a plasma formed in chlorine gas to which up to 20% by volume of tetrachloromethane is added until the layer of polycrystalline silicon is etched. Thus, the double layer is etched anisotropically and the layer of silicon oxide is attacked in practice to a very small extent.

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Stadskanaal, Netherlands

Alfred J Van Roosmalen