Robert Boschgmbh

Infineon Technologies Ag

Seg Automotive Germany Gmbh

Alfred Goerlach

Ning Qu

Richard Spitz

Hartmut Michel

Peter Flohrs

Christian Pluntke

Markus Baur

Barbara Will

Dietrich Bonart

Anton Mindl

Markus Mueller

Helga Uebbing

Dirk Ahlers

Wolfgang Feiler

Helmut Suelzle

Gert Wolf

Peter Urbach

Klaus Heyers

Rainer Topp

Carolin Tolksdorf

Uwe Knappenberger

Christoph Ruf

Rolf Jaros

Holger Haussmann

Alexander Wallrauch

Michael Wohlfarth

Karin Hamsen

Dana Keppeler

Marion Gebhard

Jochen Dietrich

Maria Del Rocio Martin Lopez

Christian Adamski

Robert Kolb

Roland Riekert

Holger Hausmann

Friederike Hahn

A power MOSFET having a substrate that has a substrate surface into which a trench structure is introduced, wherein first trenches and second trenches form the trench structure. The first trenches and second trenches are arranged in alternation. The first trenches are filled at least partially with a first material and the second trenches are filled with a second material. The first material has a first conductivity type and the second material has a second conductivity type, the first conductivity type and the second conductivity type being different from each other.

Power MOSFET and method for producing a power MOSFET

A diode is provided having a plate-shaped semiconductor element that includes a first side and a second side, the first side being connected by a first connecting layer to a first metallic contact and the second side being connected by a second connecting layer to a second metallic contact, the first side having a diode element in a middle area and having a further diode element in an edge area of the first side, which has crystal defects as a result of a separating process of the plate-shaped semiconductor element, the first connecting layer only establishing an electrical contact to the diode element and not to the further diode element and, on the first side, the further diode element having an exposed contact, which may be electrically contacted by the first connecting layer.

Diode having a plate-shaped semiconductor element

A semiconductor system including a planar anode contact, a planar cathode contact, and a volume of n-conductive semiconductor material, which has an anode-side end and a cathode-side end and extends between the anode contact and the cathode contact. A p-conductive area extends from the anode-side end of the volume toward the cathode-side end of the volume without reaching the cathode-side end. The p-conductive area has two sub-areas which are separated from one another in a cross section lying transversely with respect to the anode contact and the cathode contact, which delimit a sub-volume of the volume filled with n-conductive semiconductor material. The sub-volume is open toward the cathode contact, and is delimited by cathode-side ends of the sub-areas. A distance of the two sub-areas defining the opening is smaller than a distance between the two sub-areas prevailing outside of the opening and lying between anode side ends of the sub-areas.

Trench-based diode and method for manufacturing such a diode

A rectifier circuit is described, which includes a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, an electronic circuit which includes at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor operated in the avalanche mode corresponding to the clamping voltage between the cathode terminal and the anode terminal of the rectifier circuit. In addition, a method is provided for operating a rectifier circuit which contains a cathode terminal, an anode terminal and, between the cathode terminal and the anode terminal, at least one MOSFET transistor including an integrated inverse diode, the drain-source breakdown voltage of the MOSFET transistor being selected in accordance with the clamping voltage between the cathode terminal and the anode terminal, and the MOSFET transistor being operated in the avalanche mode.

Rectifier circuit including a self-clamping transistor

A pseudo-Schottky diode has an n-channel trench MOSFET which includes: a cathode, an anode, and located between the cathode and the anode, the following elements: a highly n-doped silicon substrate; an n-doped epilayer having a trench extending into the n-doped epilayer from above; p-doped body regions provided above the n-doped epilayer and between the trenches. Highly n-doped regions and highly p-doped regions are provided on the upper surface of the p-doped body regions. Dielectric layers are provided on the side walls of the trench. The trench is filled with a first p-doped polysilicon layer, and the bottom of the trench is formed by a second p-doped layer which is in contact with the first p-doped polysilicon layer, and the second p-doped layer determines the breakdown voltage of the pseudo-Schottky diode.

Rectifier diode

A semiconductor device having a trench MOS barrier Schottky diode includes a semiconductor volume of a first conductivity type, the semiconductor volume (i) having a first side which is covered with a metal layer, and (ii) including at least one trench which extends in the first side and is at least partially filled with metal and/or with a semiconductor material of a second conductivity type. The trench has at least one wall section which includes an oxide layer, at least in areas. At least one area, situated next to the trench, of the first side covered with the metal layer has a layer, situated between the metal layer and the semiconductor volume, made of a first semiconductor material of the second conductivity type.

Semiconductor device having a trench MOS barrier Schottky diode

A semiconductor apparatus having a trench Schottky barrier Schottky diode, which includes: a semiconductor volume of a first conductivity type, which semiconductor volume has a first side covered with a metal layer, and at least one trench extending in the first side and at least partly filled with metal. At least one wall segment of the trench, and/or at least one region, located next to the trench, of the first side covered with the metal layer, is separated by a layer, located between the metal layer and the semiconductor volume, made of a first semiconductor material of a second conductivity type.

Semiconductor apparatus having a trench Schottky barrier Schottky diode

Various embodiments provide a semiconductor device, wherein the semiconductor device comprises a semiconductor device chip formed at a substrate, wherein the semiconductor device chip comprises an active region formed in a center of the substrate and a boundary region free of active components of the semiconductor device chip; and a detection wiring arranged in the boundary region of the substrate and at least partially surrounding the active region, wherein the detection wiring and the semiconductor device chip are electrically isolated from each other; and wherein the detection wiring and the substrate are electrically connected with each other via a connection having a high electrical resistance.

Semiconductor device and method of manufacturing a semiconductor device

A generator device for the voltage supply of a motor vehicle is equipped with at least one rectifying element for rectifying an alternating voltage provided by a generator. The rectifying element has an n-channel MOS field-effect transistor in which the gate, the body area, and the source area are electrically fixedly connected to one another and in which the drain area is used as a cathode.

Generator device for the voltage supply of a motor vehicle

A semiconductor chip, which includes an n-type substrate, over which an n-type epitaxial layer having trenches introduced into the epitaxial layer and filled with p-type semiconductor is situated, the trenches each having a heavily doped p-type region on their upper side, the n-type substrate being situated in such a manner, that an alternating sequence of n-type regions having a first width and p-type regions having a second width is present; a first metallic layer, which is provided on the front side of the semiconductor chip, forms an ohmic contact with the heavily doped p-type regions and is used as an anode electrode; a second metallic layer, which is provided on the back side of the semiconductor chip, constitutes an ohmic contact and is used as a cathode electrode; a dielectric layer provided, in each instance, between an n-type region and an adjacent p-type region, as well as p-type layers provided between the n-type regions and the first metallic layer.

Super-junction schottky oxide pin diode having thin P-type layers under the schottky contact

An electronic component includes: a plate-shaped semiconductor element connected to a metallic contacting by a sinter layer; a dielectric layer having a surface metal layer disposed thereon, the dielectric layer being provided in an edge region of the semiconductor element, the edge region being provided with raised areas and depressions by patterning of the dielectric layer and/or the surface metal layer; and the sinter layer covers the edge region with the raised areas and depressions and thereby connects the edge region to the metallic contacting.

Electronic component

A semiconductor configuration, which includes an epitaxial layer of the first conductivity type disposed on a highly doped substrate of first conductivity type; a layer of a second conductivity type introduced into the epitaxial layer; and a highly doped layer of the second conductivity type provided at the surface of the layer of the second conductivity type. Between the layer of the second conductivity type and the highly doped substrate of the first conductivity type, a plurality of Schottky contacts, which are in the floating state, are provided mutually in parallel in the area of the epitaxial layer.

Semiconductor configuration having reduced on-state resistance

A semiconductor system of a Schottky diode is described having an integrated PN diode as a clamping element, which is suitable in particular as a Zener diode having a breakdown voltage of approximately 20 V for use in motor vehicle generator systems. The semiconductor system of the Schottky diode includes a combination of a Schottky diode and a PN diode. The breakdown voltage of the PN diode is much lower than the breakdown voltage of the Schottky diode, the semiconductor system being able to be operated using high currents during breakdown operation.

Schottky diode

A semiconductor assemblage of a super-trench Schottky barrier diode (STSBD) made up of an nsubstrate, an n-epilayer, trenches etched into the n-epilayer that have a width and a distance from the nsubstrate, mesa regions between the adjacent trenches having a width, a metal layer on the front side of the chip that is a Schottky contact and serves as an anode electrode, and a metal layer on the back side of the chip that is an ohmic contact and serves as a cathode electrode, wherein multiple Schottky contacts having a width or distance and a distance between the Schottky contacts, and between the Schottky contact as anode electrode and the first Schottky contact, are located on the trench wall.

Semiconductor arrangement having a Schottky diode

A semiconductor system having a trench MOS barrier Schottky diode is described, including an n-type epitaxial layer, in which at least two etched trenches are located in a two-dimensional manner of presentation on an n-type substrate which acts as the cathode zone. An electrically floating, p-type layer, which acts as the anode zone of the p-n type diode, is located in the n-type epitaxial layer, at least in a location below the trench bottom. An oxide layer is located between a metal layer and the surface of the trenches. The n-type epitaxial layer may include two n-type layers of different doping concentrations.

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Kusterdingen, Germany

Alfred Goerlach