Other

University of Minnesota

USA as Represented by Secretary of the Navy

Alfons Tuszynski

Raymond M Warner, Jr

Ronald D Schrimpf

Patrick A Shoemaker

Gene L Haviland

James R Feeley

A monocrystalline monolith contains a 3-D array of interconnected lattice-matched devices (which may be of one kind exclusively, or that kind in combination with one or more other kinds) performing digital, analog, image-processing, or neural-network functions, singly or in combination. Localized inclusions of lattice-matched metal and (or) insulator can exist in the monolith, but monolith-wide layers of insulator are avoided. The devices may be self-isolated, junction-isolated, or insulator-isolated, and may include but not be limited to MOSFETs, BJTs, JFETs, MFETs, CCDs, resistors, and capacitors. The monolith is fabricated in a single apparatus using a process such as MBE or sputter epitaxy executed in a continuous or quasicontinuous manner under automatic control, and supplanting hundreds of discrete steps with handling and storage steps interpolated. 'Writing' on the growing crystal is done during crystal growth by methods that may include but not be limited to ion beams, laser beams, patterned light exposures, and physical masks. The interior volume of the fabrication apparatus is far cleaner and more highly controlled than that of a clean room. The apparatus is highly, replicated and is amenable to mass production. The product has unprecedented volumetric function density, and high performance stems from short signal paths, low parasitic loading, and 3-D architecture. High reliability stems from contamination-free fabrication, small signal-arrival skew, and generous noise margins. Economy stems from mass-produced factory apparatus, automatic IC manufacture, and high IC yield. Among the IC products are fast and efficient memories with equally fast and efficient error-correction abilities, crosstalk-free operational amplifiers, and highly paralleled and copiously interconnected neural networks.

Monocrystalline three-dimensional integrated circuit

A non-volatile analog memory circuit includes charge depositing and storing ircuitry, voltage sensing circuitry, and closed-loop control circuitry. The charge depositing and storing circuitry includes a floating gate operable to receive charge deposited on it. The voltage sensing circuitry supplies an analog output in response to the sensed gate potential. The closed-loop control circuitry is used to control charge deposition. The control circuitry is operable to change the charge on the gate by directing electrical pulses of appropriate polarity to the charge depositing and storing circuitry. This is done to diminish the error between the analog output signal of the charge sensing circuitry and an analog input signal for providing a substantially accurate representation of the analog input signal.

Non-volatile analog memory circuit with closed-loop control

A monocrystalline monolith contains a 3-D array of interconnected lattice-matched devices (which may be of one kind exclusively, or that kind in combination with one or more other kinds) performing digital, analog, image-processing, or neural-network functions, singly or in combination. Localized inclusions of lattice-matched metal and (or) insulator can exist in the monolith, but monolith-wide layers of insulator are avoided. The devices may be self-isolated, junction-isolated, or insulator-isolated, and may include but not be limited to MOSFETs, BJTs, JFETs, MFETs, CCDs, resistors, and capacitors. The monolith is fabricated in a single apparatus using a process such as MBE or sputter epitaxy executed in a continuous or quasicontinuous manner under automatic control, and supplanting hundreds of discrete steps with handling and storage steps interpolated. 'Writing' on the growing crystal is done during crystal growth by methods that may include but not be limited to ion beams, laser beams, patterned light exposures, and physical masks. The interior volume of the fabrication apparatus is far cleaner and more highly controlled than that of a clean room. The apparatus is highly replicated and is amenable to mass production. The product has unprecedented volumetric function density, and high performance stems from short signal paths, low parasitic loading, and 3-D architecture. High reliability stems from contamination-free fabrication, small signal-arrival skew, and generous noise margins. Economy stems from mass-produced factory apparatus, automatic IC manufacture, and high IC yield. Among the IC products are fast and efficient memories with equally fast and efficient error-correction abilities, crosstalk-free operational amplifiers, and highly paralleled and copiously interconnected neural networks.

A single-crystal monolith containing a 3-D doping pattern forming varied devices and circuits that are junction-isolated. The semiconductor monolith includes interconnecting signal paths and power buses, also junction-isolated, usually with N+ regions within P matrix regions, and tunnel junctions, N+ - P+ junctions, as ohmic contacts from N-type to P-type regions. An isolating box incorporates an orthogonal isolator. The 3-D structure places layers of critical profile normal to the growth axis. The orthogonal isolator can include floating elements. The 3-D semiconductor monolith can be manufactured through continuous or quasicontinuous processing in a closed system, such as through MBE or sputter epitaxy. Also, a thin layer of silicide can be provided as an ohmic contact and/or a thick layer of silicide can be provided as a conductor thereby providing monocrystalline 3-D devices or integrated circuits. Finally, an insulator can be provided about an entire device for isolation.

A single-crystal monolith containing a 3-D doping pattern forming varied devices and circuits that are junction-isolated. The semiconductor monolith includes interconnecting signal paths and power buses, also junction-isolated, usually with N+ regions within P matrix regions, and tunnel junctions, N+-P+ junctions, as ohmic contacts from N-type to P-type regions. An isolating box incorporates an orthogonal isolator. The 3-D structure places layers of critical profile normal to the growth axis. The orthogonal isolator can include floating elements. The 3-D semiconductor monolith can be manufactured through continuous or quasicontinuous processing in a closed system, such as through MBE or sputter epitaxy.

Growing community of inventors

San Diego, CA, United States of America

Alfons Tuszynski