Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Stmicroelectronics (crolles 2) Sas

Stmicroelectronics (rousset) Sas

Alexis Rochas

Yvon Cazaux

Francois Roy

François Roy

Stéphane Caplet

Jérôme Vaillant

François Ayel

David Henry

Marie Guillon

Gaelle Palmigiani

Boris Rodrigues

Clémence Jamin

A device of acquisition of a depth image of a scene by detection of a reflected light signal. The device includes a stack of a first sensor and of a second sensor. The first sensor includes first depth photosites configured to acquire at least one first sample of charges photogenerated during first time periods. The second sensor includes second depth photosites arranged opposite the first photosites, the second photosites being configured to acquire at least one second sample of charges photogenerated during second time periods offset with respect to the first time periods by a first constant phase shift. The first sensor or the second sensor further includes third photosites configured to acquire at least one third sample during third time periods offset with respect to the first time periods by a second constant phase shift.

Device of acquisition of a depth image of a scene

The invention relates to a process for collectively bending microelectronic components comprising transferring microelectronic components () to and bending them on curved surfaces () of a shaping carrier (), an adhesive layer () ensuring adhesion of the microelectronic components (), and comprising producing conductive vias () that extend through the shaping carrier () and the adhesive lower layer (), from the lower face () of the shaping carrier (), in order to emerge onto the lower conductive pads () of the microelectronic components ().

Process for collectively bending microelectronic components using shaping carrier

A device of acquisition of a 2D image and of a depth image, including: a first sensor including a front surface and a rear surface, the first sensor being formed inside and on top of a first semiconductor substrate and including a plurality of 2D image pixels and a plurality of transmissive windows; and a second sensor including a front surface placed against the rear surface of the first sensor and a rear surface opposite to the first sensor, the second sensor being formed inside and on top of a second semiconductor substrate and comprising a plurality of depth pixels arranged opposite the windows of the first sensor.

Device for acquiring a 2D image and a depth image of a scene

A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and separated from the charge collection area by a first portion of the first doped layer which is coated with a gate. Each charge storage area is laterally delimited by two insulated conductive electrodes, extending parallel to each other and facing each other. A second heavily doped layer of opposite conductivity coats the pixel except for at each portion of the first doped layer coated with the gate.

Time-of-flight detection pixel

Growing community of inventors

Coublevie, France

Alexis Rochas