Sunedison, Inc.

Memc Electronic Materials, Inc.

Globalwafers Co., Ltd.

Memc Singapore Pte. Ltd.

Corner Star Limited

Sunedison Semiconductor Limited

Memc Singapore Pte. Ltd. (uen200614794d)

Alexis Grabbe

Henry Frank Erk

Puneet Gupta

Tracy Michelle Ragan

Mick Bjelopavlic

Hui Wang

Alex Chu

Guoqiang (David) Zhang

Michele Haler

Pramatha Payra

Yun-Biao Xin

Thomas E Doane

Mark G Stinson

James Raymond Capstick

Larry Flannery

Judith A Schmidt

Ashley Samuel Hull

Lawrence P Flannery

Jozef G Vermeire

A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. A first slurry is applied to the semiconductor wafer and the silicon layer is polished to smooth the silicon layer. A second slurry is applied to the semiconductor wafer. The second slurry includes a greater amount of a caustic agent than the first slurry.

Methods for processing semiconductor wafers having a polycrystalline finish

A gas decomposition reactor for the decomposition of a gas into a mixture of solid and gaseous by-products is disclosed. The gas decomposition reactor includes a reactor vessel, a Raman spectrometer, and a processor. The reactor vessel has an inlet for receiving inlet gas and an exhaust outlet for releasing exhaust gas. The Raman spectrometer is connected with the exhaust outlet for determining a chemical conversion within the reactor chamber and generating a corresponding signal. The processor is connected with the Raman spectrometer to receive the signal from the Raman spectrometer. The processor is capable of comparing the signal with a set of values and calculating differences between the signal and the set of values. The processor is connected with the inlet to regulate a flow of the inlet gas.

Gas decomposition reactor feedback control using raman spectrometry

Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.

Systems for producing silane

Gas decomposition reactor feedback control using Raman spectrometry

Methods for producing silane

Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.

Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods

The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material.

Methods to recover and purify silicon particles from saw kerf

Methods to slice a silicon ingot

A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.

Silicon wafer etching process and composition

A wafer carrier for retaining at least one semiconductor wafer in a processing apparatus during a processing operation which removes wafer material by at least one of abrading and chemical reaction. The processing apparatus is adapted for removing wafer material from a front side and a back side of each wafer simultaneously. The carrier includes a plate including wafer contaminating material and having an opening and a thickness. An insert has a thickness and is disposed in the opening for receiving at least one wafer and engaging a peripheral edge of the wafer to hold the wafer as the carrier rotates. The thickness of the insert is significantly greater than the thickness of the plate to inhibit removal of material from the plate and thereby inhibit bulk metal contamination of the wafer.

Wafer carrier

Growing community of inventors

St. Charles, MO, United States of America

Alexis Grabbe