Soitec

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

S.o.i.tec Silicon on Insulator Technologies

Alexis Drouin

Bernard Aspar

Didier Landru

Walter Schwarzenbach

Christophe Figuet

Alexandre Reinhardt

Gweltaz Gaudin

Julie Widiez

Emmanuel Rolland

Isabelle Huyet

Morgane Logiou

Jean-Sebastien Moulet

Isabelle Bertrand

Yann Sinquin

Eric Butaud

Jean-Sébastien Moulet

Olivier Ledoux

Cédric Charles-Alfred

Christophe Desrumaux

Thu Trang Vo

Séverin Rouchier

Berhard Aspar

Christophe Desrumeaux

A method for preparing a monodomain thin layer of ferroelectric material comprises: implanting light species in a ferroelectric donor substrate in order to form an embrittlement plane and to define a first layer therein; assembling the donor substrate with a support substrate by means of a dielectric assembly layer; and fracturing the donor substrate at the embrittlement plane. The dielectric assembly layer comprises an oxide having a hydrogen concentration lower than that of the first layer or preventing the diffusion of hydrogen to the first layer, or the dielectric assembly layer comprises a barrier preventing the diffusion of hydrogen to the first layer. A heat treatment of a free face of the first layer is used to diffuse the hydrogen contained therein and cause the multidomain transformation of a surface portion of this first layer, followed by a thinning of the first layer in order to remove the surface portion.

Method for preparing a thin layer of ferroelectric material

A method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer, the method comprising the following steps: —preparing the support comprising forming the trapping layer on a base substrate, the trapping layer having a hydrogen concentration of less than 10{circumflex over ( )}18 at/cm{circumflex over ( )}; —joining the support to a donor substrate by way of a dielectric layer having a hydrogen concentration of less than 10{circumflex over ( )}20 at/cm{circumflex over ( )}3 or comprising a barrier preventing the diffusion of hydrogen toward the trapping layer or having low hydrogen diffusivity; —removing part of the donor substrate to form the thin layer; the manufacturing method exposing the structure to a temperature below a maximum temperature of 1000° C. The present disclosure also relates to a structure obtained at the end of this method.

Method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer

A process for preparing a thin layer made of ferroelectric material based on alkali metal, exhibiting a determined Curie temperature, transferred from a donor substrate to a carrier substrate by using a transfer technique including implanting light species into the donor substrate in order to produce an embrittlement plane, the thin layer having a first, free face and a second face that is arranged on the carrier substrate. The process comprises a first heat treatment of the transferred thin layer at a temperature higher than the Curie temperature, the thin layer exhibiting a multi-domain character upon completion of the first heat treatment, and introducing, after the first heat treatment, protons into the thin layer, followed by applying a second heat treatment of the thin layer at a temperature lower than the Curie temperature to generate an internal electric field that results in the thin layer being made single domain.

Process for preparing a thin layer of ferroelectric material

A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

Process for transferring a thin layer to a support substrate that have different thermal expansion coefficients

The invention relates to a SAW resonator () comprising at least: a substrate (); a layer () of piezoelectric material arranged on the substrate; a first attenuation layer () arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (), a second attenuation layer () arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

Saw resonator comprising layers for attenuating parasitic waves

The invention relates to a method for fabricating a semiconductor substrate by providing a silicon on insulator type substrate that includes a base, an insulating layer and a first semiconductor layer, doping the first semiconductor layer to thereby obtain a modified first semiconductor layer, and providing a second semiconductor layer with a different dopant concentration than the modified first semiconductor layer over or on the modified first semiconductor layer. With this method, an improved dopant concentration profile can be achieved through the various layers which makes the substrates in particular more suitable for various optoelectronic applications.

Method for fabricating a semiconductor substrate

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La Buissiere, France

Alexis Drouin