Canon Kabushiki Kaisha

Alexis Debray

Ryota Sekiguchi

Takeaki Itsuji

Yasushi Koyama

Kosuke Asano

Satoshi Yokoyama

Atsushi Kemmochi

The present invention relates to a device for radiating or receiving an electromagnetic wave. The device includes a substrate including a recess coated by a material that reflects the electromagnetic wave, a metal portion that radiates or receives the electromagnetic wave, and an electronic element connected to the metal portion on the substrate. The metal portion includes a portion provided above an opening of the recess and a portion which is located on the substrate and connected to the electronic element.

Device for radiating or receiving electromagnetic waves

Provided is a device for performing at least one of detection and emission of electromagnetic waves, including a plurality of antennas, in which a first antenna includes a first radiating element and a first electronic element electrically connected to the first radiating element, and is sensitive to a first frequency band, and in which a second antenna includes a second radiating element and a second electronic element electrically connected to the second radiating element, and is sensitive to a second frequency band. At least a part of the second radiating element is arranged inside the first radiating element.

Electromagnetic wave sensor and/or emitter

An imager for obtaining an image of an object includes a substrate including a plurality of electrical emitting units for emitting electromagnetic waves and a plurality of electrical detecting units for detecting the electromagnetic waves reflected by the object. Each emitting unit includes an electrical emitter, a first antenna, a first metallic reflector, and a first dielectric element between the first antenna and the first metallic reflector. Each detecting unit includes an electrical detector, a second antenna, a second metallic reflector, and a second dielectric element between the second antenna and the second metallic reflector.

Active terahertz imager

Provided is a semiconductor device including: a semiconductor element arranged on a substrate and having two electrodes; a conductive strip in contact with one of the two electrodes; and a dielectric arranged between another one of the two electrodes and the conductive strip, in which the conductive strip has an opening formed therein, the dielectric has a void formed therein, and the opening and the void are connected to each other.

Semiconductor device comprising a semiconductor element having two electrodes

A valve includes a silicon substrate having first and second surfaces, a channel having an opening extending between both surfaces of the silicon substrate, and a metal pattern on the first surface of the silicon substrate. The metal pattern surrounds the opening on the first surface of the silicon substrate but does not close the opening. In addition, a low melting point metal member is disposed on the surface of the silicon substrate. The low melting point metal member covers at least a part of the metal pattern and completely closes the opening on the first surface of the silicon substrate.

Valve and production method thereof

A micro-machined temperature dependent one-shot valve is provided which has an operation temperature adjustable readily, causing no leakage below the operation temperature even at a high pressure difference, being useful both in a liquid environment and in a gas environment, and being miniaturizable. The micro-machined temperature dependent one-shot valve comprises a silicon substrate, a channelpenetrating the entire thickness of the silicon substrate, and a low melting point metal memberdeposited on one face of the silicon substrate to obstruct the channel.

Growing community of inventors

Tokyo, Japan

Alexis Debray