Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Soitec

Université Jean-monnet

Alexis Bavard

Frank Fournel

Matthew Charles

Mark Kennard

Florent Pigeon

Eric Frayssinet

David Schenk

Jérôme Meziere

Yvon Cordier

Florence Garrelie

Daniel Rondi

A semiconductor structure including a substrate, a buffer layer, a superlattice formed on the buffer layer, the superlattice including a pattern including n layers made of different materials, n being at least equal to 2, each layer including an AlGaInBN type material where x+y+w+z=1, the thickness of each layer being less than the critical thickness thereof, the number of patterns being at least equal to 50, an insert layer wherein the material has a first lattice parameter, a layer of GaN material, wherein the lattice parameter is greater than the first lattice parameter such that the layer of GaN material is compressed by the insert layer.

Semiconductor structure with enhanced withstand voltage

The invention relates to a method for manufacturing, by means of epitaxy, a monocrystalline layer of GaN on a substrate, wherein the coefficient of thermal expansion is less than the coefficient of thermal expansion of GaN, comprising the following steps: (b) three-dimensional epitaxial growth of a layer of GaN relaxed at the epitaxial temperature, (c1) growth of an intermediate layer of BAlGaInN, (c2) growth of a layer of BAlGaInN, (c3) growth of an intermediate layer of BAlGaInN, at least one of the layers formed in steps (c1) to (c3) being an at least ternary III-N alloy comprising aluminium and gallium, (d) growth of said layer of GaN.

Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method

Under consideration here is a method for the production of periodic nanostructuring on one of the surfaces of a substrate (), presenting a periodic network of dislocations, embedded within a crystalline area () located in the neighborhood of an interface () between the crystalline material surfaces of two components () assembled by bonding to form the substrate (). It comprises the following steps:

Method for nanostructuring of the surface of a substrate

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Grenoble, France

Alexis Bavard