Innolume Gmbh

Alexey Zhukov

Daniil Livshits

Igor Krestnikov

Alexey Kovsh

Sergey Mikhrin

Alexey Gubenko

Juergen Kurb

An optoelectronic module includes a semiconductor structure with a substrate having a first side and a second side, a first layered structure deposited on the first side, and a second layered structure deposited on the second side. The optoelectronic module also includes driver circuitry fabricated of the first layered structure and a diode laser fabricated of the second layered structure. The driver circuitry produces a drive electrical signal supplied to the diode laser, and the diode laser produces an optical output in response to the drive electrical signal. In a preferred embodiment, the optoelectronic module also includes a temperature-sensitive element fabricated of the first or the second layered structure. The temperature-sensitive element produces a temperature dependent control signal related to the diode laser temperature.

Double-sided monolithically integrated optoelectronic module with temperature compensation

A quantum dot laser operates on a quantum dot ground-state optical transition. The laser has a broadband (preferably&#x2267;15 nm) spectrum of emission and a high output power (preferably&#x2267;100 mW). Special measures control the maximum useful pump level, the total number of quantum dots in the laser active region, the carrier relaxation to the quantum dot ground states, and the carrier excitation from the quantum dot ground states. In one embodiment, a spectrally-selective loss is introduced into the laser resonator in order to suppress lasing on a quantum dot excited-state optical transition, thereby increasing the bandwidth of the emission spectrum.

Laser source with broadband spectrum emission

A quantum dot laser operates on a quantum dot ground-state optical transition. The laser has a broadband (preferably &#x2267;15 nm) spectrum of emission and a high output power (preferably &#x2267;100 mW). Special measures control the maximum useful pump level, the total number of quantum dots in the laser active region, the carrier relaxation to the quantum dot ground states, and the carrier excitation from the quantum dot ground states. In one embodiment, a spectrally-selective loss is introduced into the laser resonator in order to suppress lasing on a quantum dot excited-state optical transition, thereby increasing the bandwidth of the emission spectrum.

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St. Petersburg, Russia

Alexey Zhukov