Sharp Laboratories of America, Inc

Elux, Inc.

Los Alamos National Security, LLC

Sharp Corporation

Alexey Y Koposov

Sean Vail

Nobuhiro Fuke

Milan Sykora

Gary Foley

Jong-Jan Lee

Douglas James Tweet

Wei Pan

Kurt M Ulmer

Akinori Hashimura

Laura Brennan Hoch

Gary Hinch

A device and associated method are provided for a light emitting diode device (LED) with suppressed quantum dot (QD) photobrightening. The QD surfaces, with a maximum cross-sectional dimension of 10 nanometers, are treated with a solution including a multi-valent cation salt. In response to heating the solution, multi-valent cations become attached to the surface of the QD nanocrystals, forming treated QDs that are deposited overlying a top surface of an LED. The LED device emits a non-varying intensity of first wavelength light in the visible spectrum from the treated QDs, when subjected to a continuous exposure of a second wavelength of LED light having an intensity of greater than 50 watts per square centimeter. For example, blue, green, or red color light may be emitted when exposed to LED light in the ultraviolet (UV) spectrum, or a green or red color light when exposed to a blue color LED light.

Method for fabricating quantum dot light emitting diodes (LEDs) with suppressed photobrighting

A method is presented for fabricating a light emitting diode (LED) device with a stratified quantum dot (QD) structure. The method provides an LED and a stratified QD structure is formed as follows. A first liquid precursor is deposited overlying the LED emission surface to form a transparent first barrier layer. A second liquid precursor is deposited overlying the first barrier layer to form a first layer of discrete QDs. A third liquid precursor is deposited overlying the first layer of QDs to form a transparent second barrier layer. Subsequent to each barrier layer liquid precursor deposition, an annealing is performed to cure the deposited precursor. The first and second barrier layers act to encapsulate the first layer of QDs. The LED emits a first wavelength of light, and the first layer of QDs converts the first wavelength of light to a first color of light in the visible spectrum.

Stratified quantum dot phosphor structure

Quantum dot light emitting diode (LED) with suppressed photobrightening

A method is provided for forming a back contact perovskite solar cell. A substrate is coated with a positive electrode layer. The positive electrode layer is then conformally coated with a first insulator. A plurality of negative electrode segments are selectively deposited overlying the first insulator layer, and a second insulator layer is conformally deposited overlying the negative electrode segments and first insulator layer. The second insulator layer is selectively etched to expose the negative electrode segments, and an n-type semiconductor is selectively deposited overlying each exposed negative electrode segment to form n-type contacts. The first and second insulator layers are then selectively etched to expose positive electrode segments. A p-type semiconductor is selectively deposited over each exposed positive electrode segment to form p-type contacts. Finally, a hybrid organic/inorganic perovskite (e.g., CHNHPblCl) layer is conformally deposited overlying the p-type and n-type contacts. A back contact solar cell is also provided.

Back contact perovskite solar cell

Methods are provided for controlling the shape of antimony selenide (SbSe) synthesized nanostructures. The method dissolves an antimony (III) salt in a first amount of carboxylic acid, forming an antimony precursor. In one aspect, antimony (III) chloride is dissolved in oleic acid. Separately, selenourea is dissolved in oleylamine, forming a selenium precursor. The antimony precursor is combined with the selenium precursor to form a first solution and cause a reaction. The reaction is quenched with a solvent having a low boiling point. In response to quenching the reaction in the first solution, antimony selenide nanorods are formed, having a length in the range of 150-200 nanometers (nm) and a diameter in the range of 20 to 30 nm. Related methods can be used to create, shorter nanorods, nanocrystals, and hollow nanospheres.

Synthesis method for controlling antimony selenide nanostructure shapes

An energy-efficient transparent solar film is presented. The solar film has a first film layer with metal nanostructures. The metal nanostructures have plasmon resonances in wavelength bands greater than, or both less than and greater than visible wavelengths, depending on size and shape. The metal nanostructures have no plasmon resonance at visible wavelengths. In another aspect, metal oxide nanocrystals are formed with the first film layer. The metal oxide nanocrystals have absorption in a band of wavelengths less than visible wavelengths, and absorption in a band of wavelengths greater than visible wavelengths. Also provided is a solar film window and fabricating method.

Energy-efficient transparent solar film

A method is provided for forming an alkali metal-doped solution-processed metal chalcogenide. A first solution is formed that includes a first material group of metal salts, metal complexes, or combinations thereof, dissolved in a solvent. The first material group may include one or more of the following elements: copper (Cu), indium (In), and gallium (Ga). An alkali metal-containing material is added to the first solution, and the first solution is deposited on a conductive substrate. The alkali metal-containing material may be sodium (Na). An alkali metal-doped first intermediate film results, comprising metal precursors from corresponding members of the first material group. Then, thermally annealing is performed in an environment of selenium (Se), Se and hydrogen (H), hydrogen selenide (HSe), sulfur (S), S and H, hydrogen sulfide (HS), or combinations thereof. The metal precursors in the alkali metal-doped first intermediate film are transformed, and an alkali metal-doped chalcogenide layer is formed.

Alkali metal-doped solution-processed metal chalcogenides

Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

Surface treatment of nanocrystal quantum dots after film deposition

Composite materials useful for devices such as photoelectrochemical solar cells include a substrate, a metal oxide film on the substrate, nanocrystalline quantum dots (NQDs) of lead sulfide, lead selenide, and lead telluride, and linkers that attach the NQDs to the metal oxide film. Suitable linkers preserve the 1s absorption peak of the NQDs. A suitable linker has a general structure A-B-C where A is a chemical group adapted for binding to a MOand C is a chemical group adapted for binding to a NQD and B is a divalent, rigid, or semi-rigid organic spacer moiety. Other linkers that preserve the 1s absorption peak may also be used.

Composite materials with metal oxide attached to lead chalcogenide nanocrystal quantum dots with linkers

A method is provided for forming a solution-processed metal and mixed-metal selenide semiconductor using selenium (Se) nanoparticles (NPs). The method forms a first solution including SeNPs dispersed in a solvent. Added to the first solution is a second solution including a first material set of metal salts, metal complexes, or combinations thereof, which are dissolved in a solvent, forming a third solution. The third solution is deposited on a conductive substrate, forming a first intermediate film comprising metal precursors, from corresponding members of the first material set, and embedded SeNPs. As a result of thermally annealing, the metal precursors are transformed and the first intermediate film is selenized, forming a first metal selenide-containing semiconductor. In one aspect, the first solution further comprises ligands for the stabilization of SeNPs, which are liberated during thermal annealing. In another aspect, the metal selenide-containing semiconductor comprises copper, indium, gallium diselenide (CIGS).

Solution-processed metal-selenide semiconductor using selenium nanoparticles

A method is provided for forming a Group VA-doped solution-processed metal chalcogenide. The method forms a first solution including a first material group, dissolved in solvent. A Group VA-containing material is added to the first solution. The Group VA-containing material may include arsenic (As), antimony (Sb), bismuth (Bi), or combinations thereof. The first solution is deposited on a conductive substrate, and a Group VA-doped first intermediate film is formed comprising metal precursors from corresponding members of the first material group. Thermal annealing is performed in an environment of selenium (Se), Se and hydrogen (H), hydrogen selenide (HSe), sulfur (S), S and H, hydrogen sulfide (HS), or combinations thereof. As a result, the metal precursors in the Group VA-doped first intermediate film are transformed, forming a Group VA-doped metal chalcogenide layer. In one aspect, an antimony-doped Cu&#x2014;In&#x2014;Ga&#x2014;Se chalcogenide (CIGS) is formed.

Growing community of inventors

Los Alamos, NM, United States of America

Alexey Y Koposov