Samsung Electronics Co., Ltd.

Alexey Vasilyevich Khvalkovskiy

Vladimir Nikitin

Dmytro Apalkov

A method of reading information stored in a magnetic memory. In a magnetic memory comprising a magnetic tunnel junction including a first reference layer and a free layer, and a spin orbit active (SO) line adjacent to the first reference layer of the magnetic tunnel junction, first and second currents are passed through the SO line so as to achieve two different directions of a magnetic moment of the first reference layer. Two electrical characteristics of the magnetic tunnel junction are determined, the two electrical characteristics corresponding to the two different directions of the magnetic moment of the first reference layer. These two electrical characteristics are then compared to determine the value of the stored information.

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Moscow, Russia

Alexey Vasilyevich Khvalkovskiy