General Electric Company

Cisco Technology, Inc.

Morpho Detection, Inc.

Alexey V Vert

Mark Andrew Webster

Stanislav Ivanovich Soloviev

Peter Almern Losee

Ahmed Elasser

Radislav Alexandrovich Potyrailo

Vipulkumar K Patel

Peter Micah Sandvik

Rui Chen

Samer Aljabari

Steven Francis LeBoeuf

Gilbert Otto Kraemer

Geoffrey David Myers

Stephen Daley Arthur

Jody Alan Fronheiser

Alexander Viktorovich Bolotnikov

Renato Guida

Richard Dale Slates

Anis Zribi

Sergei Ivanovich Dolinsky

David Leach

Marko Klaus Baller

Anthony Wayne Krull

Garth Curtis Frederick

Xiaoyong Liu

Peter Joseph Codella

Zhiyong Wang

Arthur Stephen Daley

Ho-Young Cha

Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

Optical modulator with region epitaxially re-grown over polycrystalline silicon

A method includes defining a first waveguide in a first region of an optical device over a first dielectric layer over a silicon on insulator (SOI) substrate of the optical device and disposing a second dielectric layer on the first waveguide and the first dielectric layer of the optical device. The method also includes defining a second region on the second dielectric layer, the first dielectric layer, and the SOI substrate. The second region includes an integrated trench structure defined in the SOI substrate. The method further includes etching the second region to form an etched second region, disposing a third dielectric layer in the etched second region, and disposing a second waveguide on at least the third dielectric layer. The second waveguide is disposed to provide an optical coupling between the second waveguide and the first waveguide.

Silicon photonics platform with integrated oxide trench edge coupler structure

Embodiments disclosed herein generally relate to optical coupling between a highly-confined waveguide region and a low confined waveguide region in an optical device. The low confined waveguide region includes a trench in a substrate of the optical device in order to provide additional dielectric layer thickness for insulation between the substrate of the optical device and waveguides for light signals having a low optical mode. The low confined waveguide region is coupled to the highly-confined waveguide region via a waveguide overlap and in some embodiments via an intermediary coupling waveguide.

A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.

Semiconductor device and method for making the same

A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

Optically triggered semiconductor device and method for making the same

The present invention discloses a combustor system and method of measuring impurities in the combustion system. The combustion system includes an up-stream fuel injection point; a down-stream turbine combustor; a flame zone in the turbine combustor comprising a plurality of axial sub-zones; an optical port assembly configured to obtain a non-axial, direct, optical view of at least one of the plurality of axial sub-zones, and an impurity detection system in optical communication with the optical port assembly.

Impurity detection in combustor systems

In one embodiment, a system includes an engine that includes a combustion chamber and a viewing port into the combustion chamber. The engine also includes a camera configured to obtain an image of a flame in the combustion chamber through the viewing port and a controller configured to adjust a parameter of the engine based on the image of the flame.

System and method for adjusting engine parameters based on flame visualization

A method of light detection includes emitting a pulsed light beam from a pulsed light source; splitting the pulsed light beam with a beam splitting device into at least two light beam ray sets, wherein at least one of the ray sets collide with airborne particulates, resulting in backscattered light; which is received through an aperture(s); and detecting the received backscattered light at a detector. A light detection and ranging system is also disclosed. The present invention has been described in terms of specific embodiment(s), and it is recognized that equivalents, alternatives, and modifications, aside from those expressly stated, are possible and within the scope of the appending claims.

Light detection and ranging system

A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.

Semiconductor devices and systems

Disclosed herein is a detection system for identifying an unidentified substance in a sample, comprising light emitting sources, where at least one of the light emitting sources emits light in the infrared region; a circuit board; a trigger, that activates a pulse of electrons from the circuit board to the light emitting sources; a detector; and a central processing unit, where fluorescence generated from the unknown unidentified substance that is illuminated by light from the light emitting sources is collected in the detector and analyzed in the central processing unit.

Detector system for unidentified substances

Embodiments of the invention include a system for sensing homonuclear diatomic molecules, such as, for example, nitrogen. Other embodiments include a method for sensing homonuclear diatomic molecules. The system may include a light source, a hollow-core wave-guiding device that exhibits a low attenuation at predetermined operating optical frequencies and is in optical communication with the light source, a gas introduction system for introducing a gaseous medium between the light source and the hollow-core wave-guiding device, and a detector in optical communication with the hollow-core wave-guiding device.

Growing community of inventors

Clifton Park, NY, United States of America

Alexey V Vert