Hitachi Energy Switzerland Ag

Abb Research Ltd.

Nkt Hv Cables Gmbh

Abb Schweiz Ag

Alexey Sokolov

Dietmar Gentsch

Olaf Hunger

Fabian Mohn

Lise Donzel

Xavier Kornmann

Thomas Christen

Jakub Korbel

Markus Abplanalp

Patrick Meier

Chunlei Liu

Tarek Lamara

Thierry Delachaux

Reto Karrer

Moritz Boehm

Judith Kessler

Roberto Cameroni

Thomas Schmoelzer

Davide Riboni

Henrik Dahlgren

Giang PhamVan

Spiros Tzavalas

Jan Van-Loon

Judith Marold

A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.

Power semiconductor package with highly reliable chip topside

A gas-insulated high or medium voltage circuit breaker comprising: a first arcing contact and a second arcing contact, wherein at least one of the two arcing contact is axially movable along a switching axis, wherein during a breaking operation, an arc between the first arcing contact and the second arcing contact is formed in a arcing region; a buffer housing defining a pressurizing volume; a nozzle arranged at a nozzle side of the pressurizing volume, the nozzle defining a channel connected to the pressurizing volume and directed to the arcing region, for blowing an arc extinguishing gas towards the arcing region during the breaking operation, the nozzle comprising a nozzle front face facing towards the interior of the pressurizing volume.

Nozzle for high or medium voltage circuit breaker

A high-voltage DC cable joint including a multi-wall layered construction having individual concentrically arranged layers. The joint includes, from inside to outside, an inner conductive rubber layer, a field grading rubber layer made from a predetermined tailored formulation, an insulating rubber layer and an outer conductive rubber layer. The field grading rubber layer separates and interconnects the conductive rubber layers, and wherein the rubber layers are cross-linked by a by-product-free manufacturing method. The cable joint is preferably made from platinum cured rubbers by moulding process steps. In a preferred embodiment the cable joint is made by injection moulding.

Method of manufacturing a high-voltage DC cable joint, and a high-voltage DC cable joint

A high voltage switching device includes a current interruption assembly having at least one vacuum chamber, a fixed contact assembly having a first fixed contact and a second fixed contact positioned inside the vacuum chamber, and first and second movable-contact assemblies including a first movable contact and a second movable contact, respectively. A single mechanism actuates the first and second movable-contact assemblies between a first position and second position. In the first position, the first and second movable contacts are electrically coupled with the first and second fixed contacts, respectively. And in the second position, the first and second moveable contacts are electrically separated the same. The first movable contact and the second movable contact move, along a reference axis, one towards the other or away from the other based on the actuating mechanism.

High-voltage switching device

Growing community of inventors

Baden, Switzerland

Alexey Sokolov