Imec Vzw

Alexey Milenin

Liesbeth Witters

Didit Yudistira

A Silicon on Insulator (SOI) structure and a method for creating an undercut (UCUT) in an SOI structure, in particular, for a 300 mm SOI platform, is provided. In particular, the method includes fabricating one or more cavities in a silicon substrate underneath an insulator layer of the SOI structure by performing a first dry etch of the silicon substrate to create the one or more cavities, performing a first wet etch of the silicon substrate to expand the one or more cavities, performing a second dry etch of the silicon substrate to further expand the one or more cavities and to break silicon facets created by the first wet etch, and performing a second wet etch to further expand the one or more cavities.

Method for producing an undercut in a 300mm silicon-on-insulator platform

A process for creating a contact on a Ge-containing contact region of a semiconductor structure, said process comprising the steps of:

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Leuven, Belgium

Alexey Milenin