Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Aledia

Centre National De La Recherche Scientifique

Alexei Tchelnokov

Vincent Reboud

Philippe Gilet

Ivan-Christophe Robin

Badhise Ben Bakir

Bruno Mourey

Laurent Grenouillet

Jean-Marc Fedeli

Umberto Rossini

Xavier Hugon

François Templier

Stéphane Caplet

Vincent Calvo

Alban Gassenq

Ivan Christophe Robin

Kevin Guilloy

Jean-Michel Hartmann

Christophe Kopp

Thierry Baron

Emeric De Foucauld

Julie Widiez

Olivier Rozeau

Bertrand Dupont

Pierre Ferret

Laurent Fulbert

Pascal Gentile

Nicolas Pauc

Lina Kadura

Samuel Tardif

Kévin Guilloy

Cecile Delacour

Mathieu Bertrand

Cécile Delacour

A display device includes a support and first and second conductive electrical power supply elements, the first conductive element being arranged on the support. The display device also includes LED modules, each including at least one LED and two electrical power supply pads that are arranged on two opposite faces, respectively, of the LED module, one of which corresponds to an emissive face of the LED. The electrical power supply pads of each LED module are connected to the first and second conductive electrical power supply elements, respectively, and the connection area of an electrical power supply pad of an LED module for connection with the first conductive electrical power supply element is smaller than a receiving area of the first conductive element corresponding to the area of the first conductive element in a parallel plane to the connection areas of the power supply pads of the LED modules.

LED display device

A process for fabricating an optoelectronic device for emitting infrared radiation, including:

Process for fabricating an optoelectronic device for emitting infrared light comprising a GeSn-based active layer

An optoelectronic device including a semiconductor layer formed from a central segment and at least two lateral segments forming tensioning arms that extend along a longitudinal axis A. The semiconductor layer furthermore includes at least two lateral segments forming electrical biasing arms that extend along a transverse axis Aorthogonal to the axis A

Optoelectronic device comprising a central segment tensilely strained along a first axis and electrically biased along a second axis

A photosensitive transistor device, on a semiconductor on insulator substrate, the photosensitive zone being formed in a substrate support layer and being arranged so that the concentration of photogenerated charges in the photosensitive zone can be increased towards a given zone facing the channel zone of the transistor.

Photosensitive detector with self-aligned 3D junction and gate

The invention pertains to a process for producing a strained layer based on germanium-tin (GeSn). The process includes a step of producing a semiconductor stack containing a layer based on GeSn and having an initial strain value that is non-zero; a step of structuring the semiconductor stack so as to form a structured portion and a peripheral portion, the structured portion including a central section linked to the peripheral portion by at least two lateral sections having an average width greater than an average width of the central section; and a step of suspending the structured portion, the central section then having a final strain value higher than the initial value.

Process for producing a strained layer based on germanium-tin

A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.

Semiconductor structure including a suspended membrane containing a central segment of structured thickness

The invention relates to an optoelectronic device () including: light-emitting diodes (LED) including semiconductor elements (); current-limiting components (), wherein each component is connected in series to one of the semiconductor elements and has a resistance that increases with the strength of the current.

Optoelectronic device and method for manufacturing same

The invention relates to an optoelectronic device () including: a semiconductor substrate () doped with a first conductivity type; semiconductor contact pads () or a semiconductor layer, in contact with a surface of the substrate, doped with a second conductivity type opposite to the first type; conical or frusto-conical wired semiconductor elements (), doped with the first conductivity type, each element being in contact with one of the contact pads or with the layer; light-emitting semiconductor portions (), each portion at least partially covering one of the semiconductor elements; and a circuit (S) for polarizing the contact pads () or the layer. The contact pads or the layer are selected among: aluminum nitride, boron nitride, silicon carbide, magnesium nitride, gallium and magnesium nitride, or a combination of same and the nitride compounds thereof.

A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

Method of production of a semiconducting structure comprising a strained portion

The invention pertains to formation of a semiconducting portion () by epitaxial growth on a strained germination portion (), comprising the steps in which a cavity () is produced under a structured part () by rendering free a support layer () situated facing the structured part (), a central portion (), termed the strained germination portion, then being strained; and a semiconducting portion () is formed by epitaxial growth on the strained germination portion (), wherein the structured part () is furthermore placed in contact with the support layer () in such a way as to bind the structured part () of the support layer.

Method for forming a semiconducting portion by epitaxial growth on a strained portion

The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device (), according to the invention includes, in particular: a semiconductor substrate () doped with a first type of conductivity; semiconductor contact pads () or a semiconductor layer on a surface () of the substrate which are/is respectively doped with a second type of conductivity that is the opposite of the first type; and semiconductor elements (), each semiconductor element being in contact with a contact pad or with the layer.

The invention relates to a semiconducting structure intended to emit light, comprising a first semiconducting region () with a first type of conductivity, and a second semiconducting region () with a second type of conductivity, at least on a portion (), so as to form a junction semiconducting with the first region (). This second region () has at least a first portion () in contact with the first region (), this first portion () comprising at least one first and one second carrier confinement zone (). The structure () comprises at least a first means of polarizing the first portion () adapted to apply direct first external polarization to the first portion () in order to modify the distribution of carriers of at least one type of conductivity in the first portion () relative to the first and second confinement zones (). The invention also relates to a method of manufacturing a semiconducting structure () and a device comprising at least such a structure ().

Semiconducting structure with switchable emission zones, method of manufacturing such a structure and semiconducting device comprising such a structure

Laser device with coupled laser source and waveguide

The device for coupling an electromagnetic wave includes a waveguide and a slit metal guide. The slit metal guide is formed by two metal elements which are coplanar and spaced out from one another so as to form the slit. The slit metal guide is arranged in a plane offset from the plane of the waveguide and partially covers said waveguide, said waveguide and the slit guide being maintained at a distance from one another by a dielectric.

Device for coupling an electromagnetic wave between a waveguide and a slit metal guide, method for manufacturing such a device, and optical and electric coupler for an object using the optical coupling device

A process of making a microelectronic light-emitting device, including: a) growth on a metallic support of multiple wires based on one or more semi-conducting materials designed to emit radiant light, and b) formation of at least one electrical conducting zone of contact on at least one of the wires.

Growing community of inventors

Meylan, France

Alexei Tchelnokov