Maxim Integrated Products, Inc.

Alexei Shatalov

Alexander Kalnitsky

Robert F Scheer

Matthew Glenn Waight

Fanling Hsu Yang

Michael Rowlandson

Sang Hoon Park

Adam Heiberg

A communication system includes a first radio module and a second radio module. The first radio module includes a tuner communicatively coupled to a reference signal generator that is configured to generate a first reference signal for the tuner. The first radio module further includes a serializer configured to serialize a signal output by the tuner. The second radio module includes a deserializer configured to receive a serialized version of the signal from the serializer of the first radio module and deserialize the serialized version of the signal. The second radio module further includes a second tuner that is communicatively coupled to a clock recovery circuit. The clock recovery circuit is configured to generate a second reference signal for the second tuner based on a deserialized version of the first signal, where the second reference signal is frequency and phase locked to the first reference signal.

Remote tuner clock distribution using serializer/deserializer technology

A self-aligned bipolar transistor and a method of formation thereof are provided. The bipolar transistor has a raised extrinsic base such that the link base resistance is reduced by providing an extrinsic base which is thicker than the intrinsic base. The increase in thickness of the extrinsic base provides a less resistive layer of the heavily doped base region. The method of forming the bipolar transistor includes depositing a first epitaxial layer on a substrate to form a base region having an intrinsic base region and an extrinsic base region. The extrinsic base region is raised by depositing a second epitaxial layer over a portion of the first epitaxial layer such that the thickness of the extrinsic base layer is x and the thickness of the intrinsic layer is y, wherein x>y. The second epitaxial layer is deposited using a chemical vapor epitaxial device where the concentration of Ge to Si is gradually reduced from above 5% to close to 0% during the epitaxy process. As such, the second epitaxy layer has the highest concentration of Ge near the interface of the first and second epitaxy layer. The concentration of Ge is gradually reduced to near 0% at the top surface of the second epitaxy region.

Method of forming self-aligned NPN transistor with raised extrinsic base

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Beaverton, OR, United States of America

Alexei Shatalov