Fujitsu Corporation

Ut-battelle, Inc.

Alexei L Gruverman

Mineharu Tsukada

Yoshimasa Horii

Jeffrey Scott Cross

Angus Kingon

Sergei V Kalinin

Ho Nyung Lee

Arthur P Baddorf

Junsoo Shin

Edgar Karapetian

Mark Kachanov

A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.

Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device

Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip

Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film

Growing community of inventors

Raleigh, NC, United States of America

Alexei L Gruverman